isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE371 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -40V ·DC Current Gain— : hFE = 40(Min) @ IC= -1A ·Complement to Type MJE521 APPLICATIONS ·Designed for use in general-purpose amplifier and switching circuits. ·Recommended for use in 5~20 Watt audio amplifiers utilizing complementary symmetry circuitry. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-peak -8 A IB Base Current -2 A PC Collector Power Dissipation TC=25℃ 40 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 3.12 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor MJE371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA hFE DC Current Gain IC= -1 A; VCE= -1V isc Website：www.iscsemi.cn CONDITIONS MIN MAX -40 40 UNIT V