Inchange Semiconductor Product Specification BUL38D Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 10 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.56 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUL38D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICES Collector cut-off current VCE=800V; VBE=0 TC=125℃ 100 500 μA ICEO Collector cut-off current VCE=450V; IB=0 250 μA hFE-1 DC current gain IC=10mA ; VCE=5V hFE-2 DC current gain IC=0.5A ; VCE=5V hFE-3 DC current gain IC=2A ; VCE=5V Diode forward voltage IC=2A VF CONDITIONS MIN TYP. MAX 450 UNIT V 9 10 60 13 32 1.5 V 2.2 μs 0.8 μs Switching times resistive load ts Storage time tf Fall time VCC=150V ,IC=2.5A IB1=-IB2=0.5A;tp=30μs hFE-1 classifications A B 13-23 22-32 2 1.0 Inchange Semiconductor Product Specification BUL38D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3