Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 4 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.78 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=0.1A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 1.5 V VCEsat-4 Collector-emitter saturation voltage IC=4A ;IB=1A VBEsat-1 Base-emitter saturation voltage IC=0.5A ;IB=0.1A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.2 V VBEsat-3 Base-emitter saturation voltage IC=2.5A ;IB=0.5A 1.3 V ICES Collector cut-off current VCE=700V; VBE=-1.5V Tj=125℃ 100 500 μA ICEO Collector cut-off current VCE=400V; IB=0 250 μA hFE-1 DC current gain IC=2A ; VCE=5V 8 hFE-2 DC current gain IC=10mA ; VCE=5V 10 Diode forward voltage IC=2A VF CONDITIONS MIN TYP. MAX 400 UNIT V 9 0.5 V 40 2.5 V 2.9 μs Switching times resistive load ts Storage time tf Fall time VCC=250V ,IC=2A IB1=-IB2=0.4A;tp=30μs 0.2 2 μs Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3