IXFA7N80P IXFP7N80P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 800V = 7A Ω ≤ 1.44Ω ≤ 250ns TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 7 A IDM TC = 25°C, Pulse Width Limited by TJM 18 A IA TC = 25°C 4 A EAS TC = 25°C 300 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 200 W D (Tab) TO-220AB (IXFP) G G = Gate S = Source -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C z 300 260 °C °C z 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 DS z z z D (Tab) D = Drain Tab = Drain International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 800 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 © 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings V Applications V z ±100 nA TJ = 125°C RDS(on) 5.0 z z z 25 μA 500 μA z 1.44 Ω z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99597F(04/10) IXFA7N80P IXFP7N80P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 5.0 VDS = 20V, ID = 0.5 • ID25, Note 1 TO-263 Outline 9.5 S 1800 pF 128 pF 9.5 pF 28 ns 32 ns 55 ns tf 24 ns Qg(on) 32 nC 12 nC 9 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.62 °C/W RthJC RthCH TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 7 A Repetitive, Pulse Width Limited by TJM 28 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 7A, VGS = 0V 250 ns IRM QRM -di/dt = 100A/μs VR = 100V 3 A 300 nC TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA7N80P IXFP7N80P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 16 7 VGS = 10V 14 6 12 5 6V ID - Amperes ID - Amperes VGS = 10V 4 3 6V 10 8 6 2 4 5V 1 2 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature 7 3.2 VGS = 10V 6V VGS = 10V 2.8 R DS(on) - Normalized 6 5 ID - Amperes 5V 4 5V 3 2.4 I D = 7A 2.0 I D = 3.5A 1.6 2 1.2 1 0.8 0.4 0 0 2 4 6 8 10 12 14 16 18 20 22 -50 24 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 8 2.8 VGS = 10V 2.6 TJ = 125ºC 7 6 2.2 ID - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 5 4 3 1.4 TJ = 25ºC 2 1.2 1 1.0 0.8 0 0 2 4 6 8 10 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 12 14 16 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA7N80P IXFP7N80P Fig. 8. Transconductance Fig. 7. Input Admittance 8 18 7 16 14 g f s - Siemens 6 ID - Amperes TJ = - 40ºC 5 4 25ºC TJ = 125ºC - 40ºC 3 12 25ºC 10 8 125ºC 6 2 4 1 2 0 0 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 0 1 2 3 4 VGS - Volts 5 6 7 8 9 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 10 9 14 VDS = 400V I D = 3.5A 8 I G = 10mA 12 10 VGS - Volts IS - Amperes 7 8 TJ = 125ºC 6 5 4 3 TJ = 25ºC 4 6 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 VSD - Volts 10 15 20 25 30 35 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 100 Coss 0.1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_7N80P (4J)4-19-10-A