IXYS IXFE48N50Q

HiPerFETTM
Power MOSFETs
Q-Class
VDSS
ID25
RDS(on)
500 V 39 A 120 mΩ
Ω
Ω
500 V 41 A 110 mΩ
IXFE 44N50Q
IXFE 48N50Q
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
44N50Q
48N50Q
39
41
A
A
IDM
TC = 25°C, pulse width limited by TJM 44N50Q
48N50Q
176
192
A
A
IAR
TC = 25°C
48
A
EAR
EAS
TC = 25°C
60
2.5
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
15
V/ns
PD
TC = 25°C
400
W
-40 to +150
150
-40 to +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
19
g
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS
IISOL≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque
Weight
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
500
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 1, 2
© 2003 IXYS All rights reserved
V
4.0
V
±100
nA
TJ = 25°C
TJ = 125°C
100
2
µA
mA
44N50Q
48N50Q
120
110
mΩ
mΩ
ISOPLUS 227TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Conforms to SOT-227B outline
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
DS98895B(08/03)
IXFE 44N50Q
IXFE 48N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = IT, Notes 1, 2
42
S
7000
pF
960
pF
Crss
230
pF
td(on)
33
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
22
ns
td(off)
RG = 4.7 Ω (External),
75
ns
10
ns
190
nC
40
nC
86
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
0.31
RthJC
RthCK
0.07
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Note:1
trr
QRM
IRM
ISOPLUS-227 B
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1.0
10
48
A
192
A
1.5
V
250
ns
µC
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT Test current:
44N50Q: IT = 22A
48N50Q: IT = 24A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFE 44N50Q
IXFE 48N50Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
48
120
VGS = 10V
7V
42
90
6V
30
I D - Amperes
I D - Amperes
36
24
18
12
VGS = 10V
8V
7V
60
6V
30
5V
6
5V
0
0
0
1
2
3
4
5
6
7
8
0
V D S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
48
10
12
V D S - Volts
14
16
18
20
2.4
R D S (on) - Normalized
I D - Amperes
8
VGS = 10V
2.6
30
24
18
5V
2.2
2
1.8
I D = 48A
1.6
I D = 24A
1.4
1.2
1
0.8
6
0.6
0
0.4
0
2
4
6
8
10
12
14
16
-50
-25
0
V D S - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
3.4
45
VGS = 10V
3.1
40
2.8
35
TJ = 125ºC
2.5
I D - Amperes
R D S (on) - Normalized
6
2.8
36
12
4
Fig. 4. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
VGS = 10V
7V
6V
42
2
2.2
1.9
1.6
1.3
30
25
20
15
10
TJ = 25ºC
1
5
0.7
0
0
12
24
36
48
60
72
I D - Amperes
© 2003 IXYS All rights reserved
84
96
108 120
-5 0
-2 5
0
25
50
75
1 00
TC - Degrees Centigrade
1 25
150
IXFE 44N50Q
IXFE 48N50Q
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
60
80
54
70
60
42
g f s - Siemens
I D - Amperes
48
36
30
24
TJ = 125ºC
25ºC
-40ºC
18
12
TJ = -40ºC
25ºC
125ºC
50
40
30
20
10
6
0
0
3.5
4
4.5
5
5.5
6
6.5
0
6
12
18
V G S - Volts
100
90
9
80
8
70
7
60
50
TJ = 125ºC
36
42
48
54
60
VDS = 250V
I D = 24A
I G = 10mA
6
5
4
3
30
TJ = 25ºC
20
2
10
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
1.2
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs
V S D - Volts
Fig. 11. Capacitance
Fig . 12. M axim u m T r an s ie n t T h e r m al
Re s is t an ce
10000
1
f = 1MHz
C iss
R (th) J C - (ºC/W)
Capacitance - pF
30
Fig. 10. Gate Charge
10
VG S - Volts
I S - Amperes
Fig. 9. Source Current vs. Source-ToDrain Voltage
40
24
I D - Amperes
C oss
1000
0.1
C rss
100
0.01
0
5
10
15
20
25
30
35
40
V D S - Volts
1
10
100
Puls e W idth - millis ec onds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
1000