HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50Q 48N50Q 39 41 A A IDM TC = 25°C, pulse width limited by TJM 44N50Q 48N50Q 176 192 A A IAR TC = 25°C 48 A EAR EAS TC = 25°C 60 2.5 mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 400 W -40 to +150 150 -40 to +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 19 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 500 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 1, 2 © 2003 IXYS All rights reserved V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 2 µA mA 44N50Q 48N50Q 120 110 mΩ mΩ ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Conforms to SOT-227B outline • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Low cost • Easy to mount • Space savings • High power density DS98895B(08/03) IXFE 44N50Q IXFE 48N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = IT, Notes 1, 2 42 S 7000 pF 960 pF Crss 230 pF td(on) 33 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 22 ns td(off) RG = 4.7 Ω (External), 75 ns 10 ns 190 nC 40 nC 86 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd 0.31 RthJC RthCK 0.07 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note:1 trr QRM IRM ISOPLUS-227 B IF = 25A, -di/dt = 100 A/µs, VR = 100 V 1.0 10 48 A 192 A 1.5 V 250 ns µC A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2. IT Test current: 44N50Q: IT = 22A 48N50Q: IT = 24A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFE 44N50Q IXFE 48N50Q Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 48 120 VGS = 10V 7V 42 90 6V 30 I D - Amperes I D - Amperes 36 24 18 12 VGS = 10V 8V 7V 60 6V 30 5V 6 5V 0 0 0 1 2 3 4 5 6 7 8 0 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 48 10 12 V D S - Volts 14 16 18 20 2.4 R D S (on) - Normalized I D - Amperes 8 VGS = 10V 2.6 30 24 18 5V 2.2 2 1.8 I D = 48A 1.6 I D = 24A 1.4 1.2 1 0.8 6 0.6 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 3.4 45 VGS = 10V 3.1 40 2.8 35 TJ = 125ºC 2.5 I D - Amperes R D S (on) - Normalized 6 2.8 36 12 4 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 7V 6V 42 2 2.2 1.9 1.6 1.3 30 25 20 15 10 TJ = 25ºC 1 5 0.7 0 0 12 24 36 48 60 72 I D - Amperes © 2003 IXYS All rights reserved 84 96 108 120 -5 0 -2 5 0 25 50 75 1 00 TC - Degrees Centigrade 1 25 150 IXFE 44N50Q IXFE 48N50Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 80 54 70 60 42 g f s - Siemens I D - Amperes 48 36 30 24 TJ = 125ºC 25ºC -40ºC 18 12 TJ = -40ºC 25ºC 125ºC 50 40 30 20 10 6 0 0 3.5 4 4.5 5 5.5 6 6.5 0 6 12 18 V G S - Volts 100 90 9 80 8 70 7 60 50 TJ = 125ºC 36 42 48 54 60 VDS = 250V I D = 24A I G = 10mA 6 5 4 3 30 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs V S D - Volts Fig. 11. Capacitance Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is t an ce 10000 1 f = 1MHz C iss R (th) J C - (ºC/W) Capacitance - pF 30 Fig. 10. Gate Charge 10 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 40 24 I D - Amperes C oss 1000 0.1 C rss 100 0.01 0 5 10 15 20 25 30 35 40 V D S - Volts 1 10 100 Puls e W idth - millis ec onds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000