HiPerFETTM Power MOSFETs IXFK 73N30Q IXFX 73N30Q VDSS = 300 V ID25 = 73 A Ω RDS(on) = 45 mΩ trr ≤ 250 ns Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 73 292 73 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque (TO-264) Weight PLUS 247 TO-264 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 300 2.0 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2003 IXYS All rights reserved 0.4/6 Nm/lb.in. 6 10 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.0 V ±100 nA TJ = 125°C 25 µA 2 mA 45 mΩ G (TAB) D TO-264 (IXFK) G G = Gate S = Source D (TAB) S D = Drain TAB = Drain Features z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density z DS98870B(08/03) IXFK 73N30Q IXFX 73N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 55 S 5400 pF 1300 pF Crss 370 pF td(on) 37 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 36 ns td(off) RG = 1 Ω (External) 82 ns 12 ns 195 nC 42 nC 82 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.22 RthJC RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V IRM 73 A 292 A 1.5 V 250 ns 0.8 µC 7 A PLUS 247TM Outline (IXFX) Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 Outline (IXFK) Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFK 73N30Q IXFX 73N30Q Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25 deg. C @ 25 Deg. C 80 180 VGS = 10V 9V 8V 7V ID - Amperes ID - Amperes 60 VGS = 10V 9V 8V 150 6V 40 20 5V 90 6V 60 30 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 3 6 V DS - Volts 9 12 15 V DS - Volts Fig. 3. Output Characteristics Fig. 4. R DS(on) Norm alized to I D25 Value vs. @ 125 Deg. C Junction Temperature 2.5 80 VGS = 10V 9V 8V 7V VGS = 10V 2.2 RDS(on) - Normalized 60 ID - Amperes 7V 120 6V 40 5V 20 1.9 1.6 ID = 73A 1.3 ID = 36.5A 1 0.7 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 V DS - Volts 0 Fig. 5. R DS(on) Norm alized to I D25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature Value vs. I D 3.1 80 VGS = 10V 2.8 70 2.5 60 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade T J = 125ºC 1.9 1.6 1.3 50 40 30 20 T J = 25ºC 1 10 0.7 0 0 30 60 90 120 ID - Amperes © 2003 IXYS All rights reserved 150 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 73N30Q IXFX 73N30Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 150 Gfs - Siemens ID - Amperes T J = -40ºC 25ºC 125ºC 100 120 90 T J = -40ºC 25ºC 125ºC 60 80 60 40 30 20 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 30 60 90 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain 10 150 8 120 VGS - Volts IS - Amperes 180 90 60 180 210 VDS = 125V ID = 36.5A IG = 10mA 6 4 T J = 25ºC 2 30 0 0 0.4 0.6 0.8 1 1.2 0 1.4 V SD - Volts 100 150 200 Fig. 12. Maxim um Transient Therm al Resistance 1 10000 R(th)JC - (ºC/W) C iss f = 1M hz C oss 1000 50 QG - nanoCoulombs Fig. 11. Capacitance Capacitance - pF 150 Fig. 10. Gate Charge Voltage T J = 125ºC 120 ID - Amperes 0.1 C rss 100 0.01 0 10 20 30 40 V DS - Volts 1 10 100 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000