PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 20 50 A A IA EAS TC = 25°C TC = 25°C 10 1 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 780 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb. Weight TO-264 PLUS247 10 6 g g G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages Easy to mount z Space savings z High power density z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V 6.5 V ± 200 nA 25 5 μA mA 570 mΩ Applications: z z z z z © 2008 IXYS CORPORATION,All rights reserved High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99854B(04/08) IXFK20N120P IXFX20N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-264 (IXFK) Outline 16 S 11.1 nF 600 pF 60 pF 1.60 Ω 49 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns td(off) RG = 1Ω (External) 72 ns 70 ns 193 nC 74 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.16 RthCS °C/W 0.15 Source-Drain Diode °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 10A, -di/dt = 100A/μs VR = 100V, VGS = 0V 300 ns μC A 0.84 9 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK20N120P IXFX20N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 20 VGS = 10V 9V 18 VGS = 10V 9V 35 16 30 8V 12 ID - Amperes ID - Amperes 14 10 8 25 20 8V 15 6 10 4 7V 2 7V 5 0 0 0 2 4 6 8 10 12 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2.6 20 VGS = 10V 8V 18 VGS = 10V 2.4 2.2 RDS(on) - Normalized 16 14 ID - Amperes 20 VDS - Volts VDS - Volts 12 10 7V 8 6 4 2.0 I D = 20A 1.8 I D = 10A 1.6 1.4 1.2 1.0 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 22 2.4 VGS = 10V 20 TJ = 125ºC 2.2 16 1.8 14 ID - Amperes RDS(on) - Normalized 18 2.0 1.6 1.4 12 10 8 6 1.2 TJ = 25ºC 4 1.0 2 0 0.8 0 5 10 15 20 25 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK20N120P IXFX20N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 35 30 30 25 25 g f s - Siemens ID - Amperes TJ = - 40ºC 20 TJ = 125ºC 25ºC - 40ºC 15 25ºC 20 125ºC 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 240 280 Fig. 10. Gate Charge 16 60 VDS = 600V 14 I D = 10A 50 I G = 10mA 12 40 VGS - Volts IS - Amperes 20 ID - Amperes VGS - Volts 30 8 6 TJ = 125ºC 20 10 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 200 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N120P(86) 04-03-08-B