HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 180N20 VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data S Symbol Test Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 180 A Maximum Ratings Terminal current limit 100 A IDM TC = 25°C, pulse width limited by TJM 720 A IAR TC = 25°C 36 A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 700 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Test Conditions VDSS VGS = 0 V, ID = 3 mA 200 VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGH(th) miniBLOC, SOT-227 B (IXFN) E153432 S G IL(RMS) Symbol = 200 V = 180 A = 10 mW < 250 ns S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications 4 V ±200 nA • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls 100 2 mA mA Advantages V 10 mW • Easy to mount • Space savings • High power density 98551B (7/00) 1-2 IXFN 180N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 60A, pulse test 90 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 130 S 22000 pF 3800 pF 600 pF 55 ns 85 ns M4 screws (4x) supplied 180 ns Dim. 56 ns 660 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 120 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 270 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.05 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.2 V t rr QRM IRM IF = 50A, -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved Inches Min. Max. 31.50 7.80 0.18 Source-Drain Diode Millimeter Min. Max. A B RthJC RthCK miniBLOC, SOT-227 B TJ = 25°C TJ = 25°C 250 1.5 10 ns mC A IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2