Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS(on) TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 6 A IDM TC = 25°C, Pulse Width Limited by TJM 18 A TO-220AB (IXFP) IA TC = 25°C 3 A EAS TC = 25°C 300 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ G G 300 °C Features TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-220 &TO-247) Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g z z z z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGS = 0V, ID = 250µA 1200 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ±30V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V 10 µA 1 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V z z V z z Ω z z z © 2009 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Easy to Mount Space Savings Applications z 2.4 S Advantages BVDSS 5.0 D G = Gate S = Source 1.6mm (0.062) from Case for 10s Nm/lb.in. D (Tab) TO-247 (IXFH) TL 1.13 / 10 DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100202A(11/09) IXFA6N120P IXFP6N120P IXFH6N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 3.0 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 5.0 S 1.8 Ω 2830 pF 150 pF 30 pF 24 ns 11 ns 60 ns 14 ns 92 nC 15 nC 50 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS RthCS TO-220 (IXFP) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 0.50 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 6 A Repetitive, Pulse Width Limited by TJM 24 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IF = 3A, VGS = 0V 300 ns IRM -di/dt = 100A/µs VR = 100V QRM Note 7.8 A 1.1 µC TO-247 (IXFH) AD Outline 1: Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%. TO-263 (IXFA) Outline 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 1 = Gate 2 = Collector 3 = Emitter ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 12 6 VGS = 10V 7V VGS = 10V 10 5 7V 8 6V ID - Amperes ID - Amperes 4 3 2 6 6V 4 1 2 5V 5V 4V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.0 6 VGS = 10V R DS(on) - Normalized 6V ID - Amperes VGS = 10V 2.6 5 4 3 5V 2 2.2 I D = 6A 1.8 I D = 3A 1.4 1.0 1 0.6 4V 0 0.2 0 4 8 12 16 20 24 28 32 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 7 2.6 VGS = 10V 2.4 6 TJ = 125ºC 5 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 4 3 1.4 2 TJ = 25ºC 1.2 1 1.0 0.8 0 0 1 2 3 4 5 6 7 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 8 9 10 11 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA6N120P IXFP6N120P IXFH6N120P Fig. 7. Input Admittance Fig. 8. Transconductance 10 11 9 10 8 9 8 g f s - Siemens 7 ID - Amperes TJ = - 40ºC 6 TJ = 125ºC 25ºC - 40ºC 5 4 3 25ºC 7 125ºC 6 5 4 3 2 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 5 6 7 8 9 10 70 80 90 100 ID - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 18 VDS = 600V 9 16 I D = 3A 8 14 I G = 10mA 12 VGS - Volts IS - Amperes 7 10 8 6 6 5 4 3 TJ = 125ºC TJ = 25ºC 4 2 2 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.100 0.010 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_6N120P(6C)10-02-09