IXYS IXFR20N80P

PolarHVTM HiPerFET
Power MOSFET
VDSS = 800
V
ID25 = 10
A
Ω
RDS(on) ≤ 500 mΩ
≤ 250 ns
trr
IXFC 20N80P
IXFR 20N80P
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
11
A
IDM
TC = 25°C, pulse width limited by TJM
60
A
IAR
TC = 25°C
10
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 3 Ω
10
V/ns
PD
TC = 25°C
166
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, t = 1minute, leads-to-tab
FC
Mounting Force
Weight
ISOPLUS220
ISOPLUS247
(IXFC)
(IXFR)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
N/lb
N/lb
2
5
g
g
Characteristic Values
Min. Typ.
Max.
800
VGS(th)
VDS = VGS, ID = 4 mA
3.0
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 10 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
V~
11..65 / 2.5..15
20..120 / 4.5..25
VGS = 0 V, ID = 250 μA
RDS(on)
G
2500
BVDSS
ISOPLUS220TM (IXFC)
E153432
V
5.0
V
±100
nA
25
1
μA
mA
500
mΩ
D
Isolated back surface
S
ISOPLUS247TM (IXFR)
E153432
Isolated back surface
G = Gate
S = Source
D = Drain
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Applications
z
DC-DC converters
z
z
z
z
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
z
Easy assembly
z
z
Space savings
High power density
DS99602E(08/06)
IXFC 20N80P
IXFR 20N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 10 A, pulse test
12
23
S
4680
pF
360
pF
Crss
28
pF
td(on)
22
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = VDSS , ID = 10 A
24
ns
td(off)
RG = 3 Ω (External)
70
ns
tf
25
ns
Qg(on)
85
nC
25
nC
27
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
Qgd
ISOPLUS220 (IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
0.75 °C/W
RthJC
°C/W
0.21
RthCS
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
20
A
ISM
Repetitive
60
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 20A, -di/dt = 100 A/μs
250
ns
IRM
VR = 100 V; VGS = 0 V
QRM
8
A
0.8
μC
IXYS CO 0177 R0
ISOPLUS247 (IXFR) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFC 20N80P
IXFR 20N80P
Fig. 1. Output Characte r is tics
Fig. 2. Exte nde d Output Char acte ris tics
@ 25º C
@ 25 º C
36
20
V GS = 10V
18
16
7V
28
6V
I D - Amperes
14
I D - Amperes
V GS = 10V
32
7V
6V
12
10
8
6
24
20
16
12
5V
4
8
2
4
5V
0
0
0
2
4
6
8
10
0
12
3
6
9
Fig. 3. Output Characte r is tics
18
21
24
27
30
2.6
20
V GS = 10V
18
2.4
7V
R D S ( o n ) - Normalized
14
12
6V
10
8
6
4
2
V GS = 10V
2.2
16
I D - Amperes
15
Fig. 4. RDS(on ) Norm alize d to ID = 10A
V alue vs . Junction Te m pe r atur e
@ 125º C
5V
2
1.8
1.6
I D = 20A
1.4
1.2
I D = 10A
1
0.8
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
22
-25
V D S - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
ID = 10A V alue vs . Dr ain Cur re nt
12
2.6
11
2.4
V GS = 10V
10
TJ = 125 º C
2.2
9
2
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - V olts
V D S - V olts
1.8
1.6
1.4
8
7
6
5
4
3
1.2
2
TJ = 25 º C
1
1
0.8
0
0
5
10
15
20
25
I D - A mperes
© 2006 IXYS All rights reserved
30
35
40
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFC 20N80P
IXFR 20N80P
Fig. 7. Input Adm ittance
Fig. 8. Tr ans conductance
40
24
35
20
TJ = -40 º C
- Siemens
16
TJ = 125 º C
12
25 º C
20
fs
-40 º C
8
25 º C
125 º C
25
15
g
I D - Amperes
30
10
4
5
0
0
3.5
3.75
4
4.25
4.5
4.75
5
5.25
5.5
0
5.75
5
10
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
20
25
Fig. 10. Gate Char ge
10
60
50
40
V G S - Volts
I S - Amperes
15
I D - A mperes
V G S - V olts
30
TJ = 125 º C
20
9
V DS = 400V
8
I D = 10A
7
I G = 10m A
6
5
4
3
TJ = 25 º C
2
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
10
20
30
V S D - V olts
Q
40
50
60
70
80
90
- nanoCoulombs
Fig. 12. M axim um Tr ans ie nt The r m al
Re s is tance
Fig. 11. Capacitance
10000
1.00
C is s
R ( t h ) J C - ºC / W
Capacitance - picoFarads
G
1000
C os s
100
f = 1MH z
0.10
C rs s
10
0.01
0
5
10
15
20
25
30
35
40
V D S - V olts
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_20N80P (7J) 8-23-06B