IXYS IXTK102N30P

PolarHTTM
Power MOSFET
IXTK 102N30P
VDSS = 300 V
ID25 = 102 A
Ω
RDS(on) ≤ 33 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
300
300
V
V
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25° C
102
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
250
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
60
mJ
EAS
TC = 25° C
2.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
700
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
Md
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Weight
TO-264
300
°C
260
°C
1.13/10 Nm/lb.in.
10
g
TO-264 (IXTK)
G
D = Drain
TAB = Drain
Features
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
Easy to mount
Space savings
High power density
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
300
VGS(th)
VDS = VGS, ID = 500µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
(TAB)
S
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D
TJ = 125° C
V
5.0
V
±200
nA
25
250
µA
µA
33
mΩ
DS99130E(12/05)
IXTK 102N30P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
45
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
57
S
7500
pF
1150
pF
230
pF
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
30
ns
28
ns
130
ns
30
ns
224
nC
50
nC
110
nC
RthJC
TO-264 (IXTK) Outline
0.18° C/W
RthCS
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
102
A
ISM
Repetitive
250
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
250
3.3
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTK 102N30P
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
Fig. 1. Output Characte ris tics
@ 25ºC
250
110
V GS = 10V
9V
8V
100
90
9V
200
80
175
70
60
ID - Amperes
ID - Amperes
V GS = 10V
225
7V
50
40
30
6V
20
8V
150
7V
125
100
75
6V
50
10
5V
25
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
V DS - V olts
2
Fig. 3. Output Characte ris tics
@ 125ºC
8
10
12
V DS - V olts
14
16
18
20
2.8
V GS = 10V
9V
8V
90
2.6
V GS = 10V
2.4
80
RDS(on) - Normalized
100
7V
70
60
50
6V
40
30
20
2.2
2
1.8
1.6
I D = 102A
1.4
I D = 51A
1.2
1
0.8
10
0.6
5V
0
0.4
0
1
2
3
4
5
6
7
8
-50
9
-25
V DS - V olts
50
75
100
125
150
90
V GS = 10V
2.4
25
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
0.5 ID25 V alue vs . ID
2.6
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
80
2.2
External Lead Current Limit
70
TJ = 125ºC
2
ID - Amperes
RDS(on) - Normalized
6
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe ratur e
110
ID - Amperes
4
1.8
1.6
1.4
60
50
40
30
20
1.2
TJ = 25ºC
1
0.8
10
0
0
25
50
75
100 125 150 175 200 225 250
ID - A mperes
© 2006 IXYS All rights reserved
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTK 102N30P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
150
100
90
80
TJ = -40ºC
25ºC
125ºC
70
100
gfs - Siemens
ID - Amperes
125
75
50
TJ = 125ºC
25ºC
-40ºC
25
60
50
40
30
20
10
0
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
0
25
50
75
V GS - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
125
150
175
200
Fig. 10. Gate Char ge
10
300
V DS = 150V
9
250
I D = 51A
8
I G = 10m A
7
200
V G S - Volts
IS - Amperes
100
ID - A mperes
150
100
6
5
4
3
TJ = 125ºC
2
TJ = 25ºC
50
1
0
0
0.4
0.6
0.8
1
1.2
V SD - V olts
0
1.4
50
75
100
125
150
175
200
225
QG - nanoCoulombs
Fig. 12. For w ard-Bias
Safe Ope rating Are a
Fig. 11. Capacitance
10000
1000
TJ = 150ºC
R DS(on) Lim it
ID - Amperes
C iss
Capacitance - picoFarads
25
1000
C oss
TC = 25ºC
25µs
100
100µs
1m s
10
10m s
DC
f = 1MH z
C rs s
100
1
0
5
10
15
20
25
V DS - V olts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V DS - V olts
1000
IXTK 102N30P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
R(th)JC - ºC/W
1.00
0.10
0.01
1
10
100
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
1000