IXYS IXFV12N80PS

PolarHVTM HiPerFET
Power MOSFET
IXFH12N80P
IXFQ12N80P
IXFV12N80P
IXFV12N80PS
= 800 V
=
12 A
≤ 0.85 Ω
≤ 250 ns
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
TO-247 (IXFH)
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
800
V
VGS
Continuous
±30
V
VGSM
Tranisent
±40
V
ID25
TC = 25°C
12
A
IDM
TC = 25°C, pulse width limited by TJM
36
A
IAR
TC = 25°C
6
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
0.8
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 5 Ω
10
V/ns
PD
Maximum Ratings
TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque (TO-247, TO-3P)
FC
Mounting force
Weight
PLUS220 & PLUS220SMD
T0-3P
TO-247
TO-3P (IXFQ)
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
G
D
PLUS220 (IXFV)
G
D
S
800
VGS(th)
VDS = VGS, ID = 2.5 mA
3.0
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
G = Gate
S = Source
TJ = 125°C
D (TAB)
z
z
V
5.5
V
±100
nA
25
250
μA
μA
0.85
Ω
D = Drain
TAB = Drain
Features
z
VGS = 10 V, ID = 0.5 ID25 , Note 1
© 2006 IXYS All rights reserved
g
g
g
Characteristic Values
Min. Typ.
Max.
VGS = 0 V, ID = 250 μA
S
N/lb.
4.0
5.5
6.0
BVDSS
D (TAB)
PLUS220 SMD (IXFV...S)
1.13/10 Nm/lb.in.
(PLUS220,PLUS220SMD) 11..65/2.5..15
D (TAB)
S
G
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
RDS(on)
D (TAB)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99476E(07/06)
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, Note 1
8
Ciss
14
S
2800
pF
1
210
pF
Crss
19
pF
td(on)
23
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
26
ns
td(off)
RG = 5 Ω (External)
70
ns
tf
25
ns
Qg(on)
51
nC
13
nC
19
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
TO-247 (IXFH) Outline
0.35
(TO-247 & TO-3P)
°C/W
0.21
Source-Drain Diode
°C/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
12
A
ISM
Repetitive
36
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
Qrm
Irm
IS = 12 A, VGS = 0 V
-di/dt = 100 A/μs, VR = 100 V
250
ns
μC
Α
200
0.8
4
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-3P (IXFQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Fig. 1. Output Characte r is tics
Fig. 2. Exte nde d Output Char acte r is tics
@ 25 º C
@ 25º C
12
24
V GS = 10V
7V
20
8
I D - Amperes
I D - Amperes
V GS = 10V
7V
10
6V
6
4
16
12
6V
8
4
2
5V
5V
0
0
0
2
4
6
8
10
0
12
3
6
9
V D S - V olts
18
21
24
27
30
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe r atur e
@ 125 º C
12
2.6
V GS = 10V
2.4
R D S ( o n ) - Normalized
7V
10
I D - Amperes
15
V D S - V olts
Fig. 3. Output Char acte r is tics
6V
8
6
4
2
5V
V GS = 10V
2.2
2
1.8
1.6
I D = 12A
1.4
I D = 6A
1.2
1
0.8
0
0.6
0
4
8
12
16
20
-50
24
-25
V D S - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
Fig. 5. RDS(on) Nor m alize d to
0.5 ID25 V alue vs . ID
2.5
14
2.3
V GS = 10V
12
TJ = 125 º C
2.1
10
I D - Amperes
R D S ( o n ) - Normalized
12
1.9
1.7
1.5
8
6
4
1.3
TJ = 25 º C
1.1
2
0.9
0
0
2
4
6
8
10
12
14
16
I D - A mperes
© 2006 IXYS All rights reserved
18
20
22
24
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Fig. 8. Tr ans conductance
14
21
12
18
TJ = 125 º C
- Siemens
24
25 º C
fs
16
-40 º C
g
I D - Amperes
Fig. 7. Input Adm ittance
10
8
6
15
12
9
6
2
3
0
0
4.5
5
5.5
6
25 º C
125 º C
4
4
TJ = -40 º C
0
6.5
2
4
6
V G S - V olts
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
10
12
14
16
18
Fig. 10. Gate Char ge
10
35
9
V DS = 400V
8
I D = 6A
7
I G = 10m A
30
V G S - Volts
25
I S - Amperes
8
I D - A mperes
20
TJ = 125 º C
15
TJ = 25 º C
10
6
5
4
3
2
5
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V S D - V olts
10000
Capacitance - picoFarads
C iss
1000
C oss
100
C rss
10
0
5
10
15
20
25
5
10
15
Q
Fig. 11. Capacitance
f = 1MH z
0
30
35
40
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
20
G
25
30
35
40
- nanoCoulombs
45
50
55
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Fig. 12. Maximum Transient Thermal Resistance
R ( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
1
10