IXYS IXFN200N10P

PolarTM HiPerFET
Power MOSFET
VDSS = 100 V
ID25 = 200 A
Ω
RDS(on) ≤ 7.5 mΩ
≤ 150 ns
trr
IXFN 200N10P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
200
A
ID(RMS)
External lead current limit
100
A
IDM
TC = 25°C, pulse width limited by TJM
400
A
IAR
TC = 25°C
60
A
EAR
TC = 25°C
100
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
680
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
lb.in.
30
g
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS,
IISOL ≤ 1 mA,
T = 1 min
T=1s
Md
Mounting torque, Terminal connection torque
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 μA
100
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS, VGS = 0 V
V
TJ = 150°C
TJ = 175°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 400A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
5.5
5.0
V
±100
nA
25
500
2.5
μA
μA
mA
7.5
mΩ
mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
•
•
•
•
Advantages
• Easy to mount
• Space savings
• High power density
DS99239E(03/06)
IXFN 200N10P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
60
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
97
S
7600
pF
2900
pF
860
pF
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
35
ns
150
ns
90
ns
235
nC
50
nC
135
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
SOT-227B (IXFN) Outline
0.22 °C/W
RthJC
RthCS
°C/W
0.05
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
200
A
ISM
Repetitive
400
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25 A, dI/dt = 100 A/μs
150 ns
QRM
VR = 50 V, VGS = 0 V
IRM
0.4
μC
6
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 200N10P
Fig. 1. Output Characte r is tics
@ 25ºC
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
350
200
V GS = 10V
9V
175
V GS = 10V
300
9V
250
8V
125
I D - Amperes
I D - Amperes
150
100
75
7V
200
8V
150
7V
100
50
6V
25
50
0
6V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0.5
1
1.5
V D S - V olts
Fig. 3. Output Characte r is tics
@ 150ºC
3
3.5
4
4.5
5
2.4
V GS = 10V
9V
V GS = 10V
2.2
150
R D S ( o n ) - Normalized
175
I D - Amperes
2.5
Fig. 4. RDS(on ) Norm alize d to ID = 100A
V alue vs . Junction Te m pe r atur e
200
8V
125
100
7V
75
6V
50
25
2
1.8
I D = 200A
1.6
1.4
I D = 100A
1.2
1
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
-50
3.5
-25
0
V D S - V olts
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to ID = 100A
V alue vs . Drain Curr e nt
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
12 0
2.4
Ex ternal Lead Current limit
2.2
10 0
TJ = 175 ºC
2
1.8
I D - Amperes
R D S ( o n ) - Normalized
2
V D S - V olts
1.6
V GS = 10V
1.4
V GS = 15V - - - -
1.2
80
60
40
TJ = 25 ºC
1
20
0.8
0.6
0
0
50
100
150
200
I D - A mperes
© 2006 IXYS All rights reserved
250
300
350
-5 0
-2 5
0
25
50
75
100
125
T C - Degrees Centigrade
150
175
IXFN 200N10P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
300
140
250
120
- Siemens
TJ = 150 ºC
100
TJ = -40 ºC
25 ºC
80
150 ºC
60
fs
150
g
I D - Amperes
100
200
25 ºC
40
-40 ºC
50
20
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
0
9
50
100
150
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
250
300
350
Fig. 10. Gate Char ge
10
350
V DS = 50V
9
300
I D = 100A
8
250
I G = 10m A
7
V G S - Volts
I S - Amperes
200
I D - A mperes
200
150
100
6
5
4
3
TJ = 150 ºC
2
50
TJ = 25 ºC
1
0
0
0.4
0.6
0.8
1
1.2
1.4
1.6
0
V S D - V olts
50
75
Q
100 125 150 175 200 225 250
G
- nanoCoulombs
Fig . 1 2 . Fo r w a r d - Bia s
S a f e O p e r a t in g A r e a
Fig. 11. Capacitance
100,000
1000
f = 1MH z
TJ = 1 7 5 ºC
R D S (o n ) L im it
C is s
10,000
I D - Amperes
Capacitance - picoFarads
25
C os s
C rs s
1,000
TC = 2 5 ºC
100µs
100
1m s
10m s
DC
100
10
0
5
10
15
20
25
30
35
40
V DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
VD
S
- V o lts
1000
IXFN 200N10P
Fig. 13. Maximum Transient Thermal Resistance
R( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_200N10P (88) 03-22-06-E.xls