PolarTM HiPerFET Power MOSFET VDSS = 100 V ID25 = 200 A Ω RDS(on) ≤ 7.5 mΩ ≤ 150 ns trr IXFN 200N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 200 A ID(RMS) External lead current limit 100 A IDM TC = 25°C, pulse width limited by TJM 400 A IAR TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 680 W -55 ... +175 175 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, IISOL ≤ 1 mA, T = 1 min T=1s Md Mounting torque, Terminal connection torque Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 100 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS, VGS = 0 V V TJ = 150°C TJ = 175°C RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 5.5 5.0 V ±100 nA 25 500 2.5 μA μA mA 7.5 mΩ mΩ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays • • • • Advantages • Easy to mount • Space savings • High power density DS99239E(03/06) IXFN 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 97 S 7600 pF 2900 pF 860 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd SOT-227B (IXFN) Outline 0.22 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, dI/dt = 100 A/μs 150 ns QRM VR = 50 V, VGS = 0 V IRM 0.4 μC 6 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 200N10P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 350 200 V GS = 10V 9V 175 V GS = 10V 300 9V 250 8V 125 I D - Amperes I D - Amperes 150 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 V D S - V olts Fig. 3. Output Characte r is tics @ 150ºC 3 3.5 4 4.5 5 2.4 V GS = 10V 9V V GS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on ) Norm alize d to ID = 100A V alue vs . Junction Te m pe r atur e 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 V D S - V olts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 100A V alue vs . Drain Curr e nt Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 12 0 2.4 Ex ternal Lead Current limit 2.2 10 0 TJ = 175 ºC 2 1.8 I D - Amperes R D S ( o n ) - Normalized 2 V D S - V olts 1.6 V GS = 10V 1.4 V GS = 15V - - - - 1.2 80 60 40 TJ = 25 ºC 1 20 0.8 0.6 0 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 350 -5 0 -2 5 0 25 50 75 100 125 T C - Degrees Centigrade 150 175 IXFN 200N10P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 300 140 250 120 - Siemens TJ = 150 ºC 100 TJ = -40 ºC 25 ºC 80 150 ºC 60 fs 150 g I D - Amperes 100 200 25 ºC 40 -40 ºC 50 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 150 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 250 300 350 Fig. 10. Gate Char ge 10 350 V DS = 50V 9 300 I D = 100A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 200 I D - A mperes 200 150 100 6 5 4 3 TJ = 150 ºC 2 50 TJ = 25 ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - V olts 50 75 Q 100 125 150 175 200 225 250 G - nanoCoulombs Fig . 1 2 . Fo r w a r d - Bia s S a f e O p e r a t in g A r e a Fig. 11. Capacitance 100,000 1000 f = 1MH z TJ = 1 7 5 ºC R D S (o n ) L im it C is s 10,000 I D - Amperes Capacitance - picoFarads 25 C os s C rs s 1,000 TC = 2 5 ºC 100µs 100 1m s 10m s DC 100 10 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VD S - V o lts 1000 IXFN 200N10P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_200N10P (88) 03-22-06-E.xls