PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS VDSS ID25 RDS(on) trr = 500 V = 36 A ≤ 170 mΩ Ω ≤ 200 ms TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 36 90 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 36 50 1.5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 3 Ω 10 V/ns PD TC = 25° C 540 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247) Weight TO-247 TO-268 PLUS220 D (TAB) TO-268 (IXFT) G D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV...S) 1.13/10 Nm/lb.in. 6 5 2 g g g G S G = Gate S = Source Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250µA 500 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C l V l 5.0 V l ±100 nA 25 500 µA µA 170 mΩ D (TAB) D = Drain TAB = Drain Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l © 2006 IXYS All rights reserved S Easy to mount Space savings High power density DS99364E(03/06) IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 23 Ciss Coss 36 S 5500 pF 510 pF 40 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 3 Ω (External) 75 ns tf 21 ns Qg(on) 93 nC 30 nC 31 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 1 (TO-247) (PLUS220) Source-Drain Diode Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 90 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, QRM IRM -di/dt = 100 A/µs VR = 100V 200 0.8 8.0 3 Dim. ° C/W ° C/W 0.21 0.21 2 Terminals: 1 - Gate 3 - Source 0.23 ° C/W RthJC RthCS TO-247 (IXFH) Outline TO-268 (IXFT) Outline ns µC A PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Fig. 2. Exte nde d Output Characte r is tics Fig. 1. Output Characte ris tics @ 25º C @ 25º C 80 36 V GS = 10V 32 8V 24 6V 20 16 12 5.5V 4 50 6.5V 40 6V 30 20 8 5.5V 10 5V 0 5V 0 0 1 2 3 4 5 6 0 7 2 4 6 V D S - V olts Fig. 3. Output Characte ris tics @ 125ºC 10 12 14 V D S - V olts 16 18 20 22 24 3.1 V GS = 10V 32 R D S ( o n ) - Normalized 24 20 5.5V 16 12 5V 8 4.5V 4 V GS = 10V 2.8 7V 6V 28 I D - Amperes 8 Fig. 4. RDS(on ) Norm alize d to ID = 18A V alue vs . Junction Te m pe ratur e 36 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 V D S - V olts 12 14 16 -50 25 50 75 100 125 150 40 V GS = 10V 3 0 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature ID = 18A V alue vs . Drain Cur re nt 3.4 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to 35 30 TJ = 125ºC 2.6 I D - Amperes R D S ( o n ) - Normalized 7V 60 I D - Amperes I D - Amperes 28 V GS = 10V 70 8V 7V 2.2 1.8 1.4 25 20 15 10 TJ = 25ºC 1 5 0 0.6 0 10 20 30 40 50 I D - A mperes © 2006 IXYS All rights reserved 60 70 80 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Fig. 8. Trans conductance Fig. 7. Input Adm ittance 55 70 50 45 - Siemens 35 30 20 TJ = 125ºC fs 25 15 25ºC -40ºC g I D - Amperes 40 60 TJ = -40ºC 50 25ºC 125ºC 40 30 20 10 10 5 0 0 4 4.5 5 5.5 6 6.5 0 7 10 20 30 V G S - V olts 50 60 70 80 90 Fig. 10. Gate Char ge 100 10 90 9 V DS = 250V 80 8 I D = 18A 70 7 I G = 10m A V G S - Volts I S - Amperes Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Dr ain V oltage 60 50 40 TJ = 125ºC 30 40 I D - A mperes 6 5 4 3 20 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 10 20 V S D - V olts 30 Q G 40 50 60 70 80 90 100 - nanoCoulombs Fig. 12. Forw ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 10000 100 R DS(on) Lim it 25µs 1000 I D - Amperes Capacitance - picoFarads C is s C oss 100 100µs 10 1m s DC 10m s TJ = 150ºC f = 1MH z C rs s TC = 25ºC 10 1 0 5 10 15 20 25 V D S - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXFH36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds PLUS220 (IXFV) Outline © 2006 IXYS All rights reserved IXYS REF: F_36N50P (7J) 03-29-06-D.xls