IXYS IXFN44N80P

PolarHVTM HiPerFET
Power MOSFET
IXFN 44N80P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
39
100
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
22
80
3.4
A
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
10
V/ns
PD
TC = 25°C
694
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
3000
V~
V~
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, 1 minute
IISOL < 1 mA, 10 seconds
Md
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Weight
30
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 800 μA
800
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ± 30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
g
TJ = 125°C
VGS = 10 V, ID = 0.5 ITD25, Note 1
V
5.0
V
± 200
nA
50
1.5
μA
mA
190
mΩ
= 800
V
= 39
A
Ω
≤ 190 mΩ
≤ 250
ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
G = Gate
S = Source
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
DS99503E(06/06)
© 2006 IXYS All rights reserved
IXFN 44N80P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
27
Ciss
43
S
12
nF
910
pF
Crss
30
pF
td(on)
28
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
22
ns
td(off)
RG = 1 Ω (External)
75
ns
27
ns
200
nC
67
nC
65
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
0.18 °C/W
RthJC
RthCS
°C/W
0.05
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
44
A
ISM
Repetitive
100
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 22 A, -di/dt = 100 A/μs
250
ns
QRM
VR = 100 V, VGS = 0 V
IRM
0.8
μC
8.0
A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734 B2
6,759,692
6,771,478 B2
IXFN 44N80P
Fig. 1. Output Characte r is tics
Fig. 2. Exte nde d Output Characte ris tics
@ 25° C
@ 25° C
100
45
V GS = 10V
40
7V
80
35
70
6V
30
I D - Amperes
I D - Amperes
V GS = 10V
90
7V
25
20
15
5V
60
6V
50
40
30
10
20
5
10
5V
0
0
0
1
2
3
4
5
6
7
0
8
3
6
9
V D S - V olts
15
18
21
24
27
30
V D S - V olts
Fig. 3. Output Characte r is tics
Fig. 4. RDS(on ) Nor m alize d to ID = 22A
V alue vs . Junction Te m pe rature
@ 125° C
2.6
45
V GS = 10V
40
2.4
V GS = 10V
7V
R D S ( o n ) - Normalized
35
6V
I D - Amperes
12
30
25
20
5V
15
10
5
2.2
2.0
1.8
I D = 44A
1.6
I D = 22A
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
8
10
12
14
-50
16
-25
V D S - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to ID = 22A
V alue vs . Drain Curr e nt
Fig . 6. Dr ain Cu r r e n t vs . Cas e
T e m p e r atu r e
44
2.4
V GS = 10V
2.2
40
TJ = 125 ° C
32
I D - Amperes
R D S ( o n ) - Normalized
36
2
1.8
1.6
1.4
28
24
20
16
12
1.2
TJ = 25 ° C
8
1
4
0
0.8
0
10
20
30
40
50
60
I D - A mperes
© 2006 IXYS All rights reserved
70
80
90
100
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFN 44N80P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
90
70
80
60
TJ = - 40 ° C
70
40
25 ° C
20
125 ° C
50
40
fs
- 40 ° C
30
25 ° C
60
- Siemens
TJ = 125 ° C
30
g
I D - Amperes
50
20
10
10
0
0
3.5
4
4.5
5
5.5
6
0
6.5
10
20
30
V G S - V olts
Fig. 9. Sour ce Cur re nt vs .
Sour ce -To-Drain V oltage
50
60
70
80
150
175
200
Fig. 10. Gate Charge
10
140
9
V DS = 400V
8
I D = 22A
7
I G = 10m A
120
V G S - Volts
100
I S - Amperes
40
I D - A mperes
80
60
40
6
5
4
3
TJ = 125 ° C
2
TJ = 25 ° C
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
V S D - V olts
25
50
75
Q
G
100
125
- NanoCoulombs
Fig . 12. M axim u m T r an s ie n t T h e r m al
Re s is tan ce
Fig. 11. Capacitance
1. 00
100000
f = 1MH z
10000
R( t h ) J C - ºC / W
Capacitance - PicoFarads
C is s
C os s
1000
100
0. 10
C rss
10
0. 01
0
5
10
15
20
25
30
35
40
V DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
0. 001
0. 01
0.1
Puls e Width - Sec onds
1
10