Preliminary Technical Information IXFK40N90P IXFX40N90P PolarTM Power MOSFET HiPerFETTM VDSS ID25 900V 40A Ω 210mΩ 300ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 900 900 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 40 80 A A IA EAS TC = 25°C TC = 25°C 20 1.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 960 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) FC Mounting force Weight TO-264 TO-247 (IXFX) TO-264 (IXFK) G Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C V 6.5 V ± 200 nA 50 μA 3.5 mA 210 mΩ G = Gate S = Source D = Drain TAB = Drain Features z z International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density Applications: z z z z z © 2008 IXYS CORPORATION,All rights reserved (TAB) S (TAB) z Test Conditions D PLUS247 (IXFX) z Symbol = = Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls DS100061(10/08) IXFK40N90P IXFX40N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS= 20V, ID = 0.5 • ID25, Note 1 18 RGi 30 S Gate input resistance 1.5 Ω 14 nF VGS = 0V, VDS = 25V, f = 1MHz 896 pF 58 pF 53 ns Ciss Coss TO-264 (IXFK) Outline Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 ns td(off) RG = 1Ω (External) 77 ns 46 ns 230 nC 70 nC 100 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.13 RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 40 A Repetitive, pulse width limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 20A, -di/dt = 100A/μs VR = 100V, VGS = 0V 300 ns μC A 1.7 14 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK40N90P IXFX40N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 9V 35 70 25 ID - Amperes 30 ID - Amperes VGS = 10V 9V 80 8V 20 15 60 50 40 8V 30 7V 10 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 VDS - Volts 40 25 30 3.0 VGS = 10V 8V 35 2.8 RDS(on) - Normalized 25 20 VGS = 10V 2.6 30 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 7V 15 10 2.4 2.2 I D = 40A 2.0 I D = 20A 1.8 1.6 1.4 1.2 1.0 0.8 5 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 45 2.8 VGS = 10V 2.6 40 TJ = 125ºC 2.4 35 2.2 ID - Amperes RDS(on) - Normalized 15 VDS - Volts 2.0 1.8 1.6 30 25 20 15 1.4 1.2 10 TJ = 25ºC 5 1.0 0.8 0 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK40N90P IXFX40N90P Fig. 7. Input Admittance Fig. 8. Transconductance 55 55 50 50 45 45 25ºC 40 g f s - Siemens ID - Amperes 40 TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 35 30 25 20 35 125ºC 30 25 20 15 15 10 10 5 5 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 5 10 15 20 VGS - Volts 25 30 35 40 45 50 55 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 120 VDS = 450V 14 I D = 20A 100 I G = 10mA 80 VGS - Volts IS - Amperes 12 60 10 8 6 40 TJ = 125ºC 4 TJ = 25ºC 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 VSD - Volts 100 150 200 250 300 350 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_40N90P(96)10-23-08