Preliminary Technical Information IXTH160N10T IXTQ160N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 160 75 430 A A A IAR EAS TC = 25°C TC = 25°C 25 500 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω 3 V/ns PD TC = 25°C 430 W Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 100 VGS(th) VDS = VGS, ID = 250 μA 2.5 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V V TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 G D (TAB) S TO-3P (IXTQ) G TJ TJM Tstg RDS(on) = 100 V = 160 A Ω ≤ 7.0 mΩ 5.8 4.5 V ± 200 nA 5 250 μA μA 7.0 mΩ D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99710 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTH160N10T IXTQ160N10T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 65 102 S 6600 pF Ciss Coss TO-247 AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. 880 pF 135 pF 33 ns td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 61 ns td(off) RG = 5 Ω (External) 49 ns 42 ns 132 nC 37 nC 40 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 1 RthCH Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V 160 A ISM Pulse width limited by TJM 430 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/μs 100 ns 2 - Drain Tab - Drain Dim. °C/W 0.25 3 Terminals: 1 - Gate 3 - Source 0.35 °C/W RthJC 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 50 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARYTECHNICALINFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH160N10T IXTQ160N10T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 160 V GS = 10V 9V 8V 140 250 225 I D - Amperes 120 I D - Amperes V GS = 10V 9V 8V 275 100 7V 80 60 200 175 7V 150 125 100 6V 40 75 6V 50 20 25 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1 2 3 V DS - Volts 4 5 6 7 8 V DS - Volts Fig. 4. R DS(on) Normalized to ID = 160A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 2.8 V GS = 10V 8V 140 V GS = 10V 2.6 2.4 R DS(on) - Normalized I D - Amperes 120 7V 100 80 6V 60 40 2.2 I D = 160A 2 I D = 80A 1.8 1.6 1.4 1.2 1 20 5V 0.8 0 0.6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 Fig. 5. R DS(on) Normalized to ID = 80A Value v s. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 3.2 140 V GS = 10V 15V - - - - 3 2.8 External Lead Current Limit for TO-263 (7-Lead) 120 TJ = 175ºC 2.6 100 2.4 I D - Amperes R DS(on) - Normalized 25 T J - Degrees Centigrade V DS - Volts 2.2 2 1.8 1.6 1.4 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 TJ = 25ºC 1.2 80 1 20 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 175 IXTH160N10T IXTQ160N10T Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 180 120 TJ = - 40ºC 100 25ºC 160 g f s - Siemens I D - Amperes 140 120 100 80 TJ = 150ºC 25ºC - 40ºC 60 40 80 150ºC 60 40 20 20 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 20 40 60 V GS - Volts 100 120 140 160 180 200 220 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 V DS = 50V 9 250 I D = 25A 8 I G = 10mA 7 200 V GS - Volts I S - Amperes 80 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 20 V SD - Volts 60 80 100 120 140 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.00 10,000 C iss f = 1 MHz Z (th)JC - ºC / W Capacitance - PicoFarads 40 C oss 1,000 0.10 C rss 100 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10 IXTH160N10T IXTQ160N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 90 RG = 5 Ω 80 65 V GS = 10V 60 70 t r - Nanoseconds t r - Nanoseconds V DS = 50V 60 50 TJ = 25ºC I D = 50A 40 RG = 5 Ω 55 V GS = 10V V DS = 50V 50 45 40 TJ = 125ºC I D = 25A 30 35 20 30 25 35 45 55 65 75 85 95 105 115 25 125 30 35 T J - Degrees Centigrade Fig. 15. Resistiv e Turn-on Switching Times vs. Gate Resistance 65 60 TJ = 125ºC, V GS = 10V t r - Nanoseconds 90 45 70 40 50 80 RG = 5 Ω , V GS = 10V I D = 25A 100 65 8 10 12 14 16 18 60 90 55 85 50 75 70 30 25 20 35 45 TJ = 125ºC 80 140 77 130 74 V DS = 50V 75 85 95 105 60 115 125 TJ = 25ºC 65 38 40 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 45 50 160 100 145 I D = 50A 90 130 70 100 60 85 50 50 70 47 40 55 44 30 53 TJ = 25ºC 110 115 56 39 175 V DS = 50V 80 59 TJ = 125ºC - Nanoseconds 62 41 I D = 25A d ( o f f ) - Nanoseconds 68 190 TJ = 125ºC, V GS = 10V 120 d(off) 42 205 td(off) - - - - tf t 71 t t f - Nanoseconds td(off) - - - - RG = 5 Ω , V GS = 10V 35 65 Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance t f - Nanoseconds tf 30 55 T J - Degrees Centigrade 44 25 65 I D = 50A Fig. 17. Resistiv e Turn-off Switching Times vs. Drain Current 40 80 I D = 25A R G - Ohms 43 95 I D = 50A 40 30 6 105 70 35 4 110 V DS = 50V 45 35 30 115 d ( o f f ) - Nanoseconds I D = 25A tf t 50 - Nanoseconds 110 d(on) 55 I D = 50A 120 td(off) - - - - 85 75 t V DS = 50V 130 50 90 td(on) - - - - t f - Nanoseconds 150 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 170 tr 40 I D - Amperes 40 4 6 8 10 12 14 16 18 20 R G - Ohms IXYS REF: T_160N10T (5V) 11-16-06-A.xls