IXYS IXBH12N300

High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBT12N300
IXBH12N300
VCES = 3000V
IC110 = 12A
VCE(sat) ≤ 3.2V
TO-268 (IXBT)
G
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
3000
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
3000
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
30
12
100
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 30Ω
Clamped Inductive Load
ICM = 98
1500
A
V
C
PC
TC = 25°C
160
W
G = Gate
E = Emiiter
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
4
6
g
g
TJ
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Md
Mounting Torque (TO-247)
Weight
TO-268
TO-247
E
C (Tab)
TO-247 (IXBH)
G
Characteristic Values
Min.
Typ.
Max.
BVCES
IC = 250μA, VGE = 0V
3000
VGE(th)
IC = 250μA, VCE = VGE
3.0
ICES
VCE = 0.8 • VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 12A, VGE = 15V, Note 1
2.8
TJ = 125°C
V
25 μA
1 mA
TJ = 125°C
3.5
z
z
z
±100
nA
3.2
V
V
z
z
High Blocking Voltage
International Standard Packages
Anti-Parallel Diode
Low Conduction Losses
Low Gate Drive Requirement
High Power Density
Applications:
z
z
z
z
z
© 2012 IXYS CORPORATION, All Rights Reserved
C
= Collector
Tab = Collector
Advantages
V
5.0
C (Tab)
Features
z
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
E
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
DS100120A(10/12)
IXBT12N300
IXBH12N300
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfS
6.5
IC = 12A, VCE = 10V, Note 1
TO-268 Outline
10.8
S
1290
pF
56
pF
Cres
19
pF
Qg
62
nC
Cies
Coes
Qge
VCE = 25V, VGE = 0V, f = 1MHz
IC = 12A, VGE = 15V, VCE = 1000V
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
Resistive Switching Times, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 1250V, RG = 10Ω
13
nC
8.5
nC
64
ns
140
ns
180
ns
540
ns
65
ns
395
ns
175
ns
530
ns
RthJC
RthCS
0.78
TO-247
0.21
Terminals: 1 - Gate
3 - Emitter
2,4 - Collector
°C/W
°C/W
TO-247 Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
2.1
1
VF
IF = 12A, VGE = 0V
trr
IF = 6A, VGE = 0V, -diF/dt = 100A/μs
1.4
μs
IRM
VR = 100V, VGE = 0V
21
A
2
∅P
3
V
e
Terminals: 1 - Gate
3 - Emitter
Note
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2 - Collector
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBT12N300
IXBH12N300
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
24
240
VGE = 25V
VGE = 25V
20V
15V
20
200
20V
160
10V
IC - Amperes
IC - Amperes
16
12
8
4
15V
120
80
10V
40
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
10
15
20
25
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
24
VGE = 15V
I
VCE(sat) - Normalized
1.6
16
10V
12
30
1.8
VGE = 25V
20V
15V
20
IC - Amperes
5
VCE - Volts
8
4
C
1.4
= 24A
I
C
= 12A
1.2
1.0
I
C
= 6A
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
VCE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
40
6.0
5.5
36
TJ = 25ºC
32
5.0
4.0
I
C
IC - Amperes
VCE - Volts
28
4.5
= 24A
3.5
24
20
16
TJ = 125ºC
25ºC
- 40ºC
12
12A
3.0
8
2.5
4
6A
0
2.0
5
7
9
11
13
15
17
19
VGE - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
21
23
25
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
8.0
8.5
9.0
IXBT12N300
IXBH12N300
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
18
36
TJ = - 40ºC
16
32
14
28
12
24
125ºC
IF - Amperes
g f s - Siemens
25ºC
10
8
TJ = 125ºC
16
6
12
4
8
2
4
0
TJ = 25ºC
20
0
0
5
10
15
20
25
30
35
40
45
0
0.5
1
1.5
2
2.5
3
VF - Volts
IC - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
16
10,000
f = 1 MHz
VCE = 1kV
14
I C = 12A
VGE - Volts
Capacitance - PicoFarads
I G = 10mA
12
10
8
6
4
1,000
Cies
Coes
100
2
Cres
0
10
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Reverse-Bias Safe Operating Area
1
100
Z(th)JC - ºC / W
IC - Amperes
80
60
40
0.1
TJ = 125ºC
20
0
500
RG = 30Ω
dv / dt < 10V / ns
1000
1500
2000
2500
3000
0.01
0.00001
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
0.0001
0.001
0.01
Pulse Width - Seconds
0.1
1
10
IXBT12N300
IXBH12N300
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
600
600
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
500
VCE = 1250V
VCE = 1250V
TJ = 125ºC
400
I
C
t r - Nanoseconds
t r - Nanoseconds
500
= 24A
300
I
C
= 12A
200
100
400
300
200
TJ = 25ºC
100
0
0
25
35
45
55
65
75
85
95
105
115
125
6
8
10
12
14
TJ - Degrees Centigrade
750
110
100
I C = 24A, 12A
450
90
400
80
350
70
300
60
250
30
40
50
60
70
80
90
td(off) - - - -
RG = 10Ω, VGE = 15V
600
180
I C = 12A
500
400
300
50
100
I C = 24A
200
25
35
45
220
600
180
400
140
TJ = 125ºC, 25ºC
200
100
0
60
16
95
105
115
140
125
18
20
IC - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
22
24
td(off) - - - -
800
TJ = 125ºC, VGE = 15V
700
VCE = 1250V
550
600
I C = 12A
500
500
450
400
400
I
C
300
= 24A
350
200
300
100
250
10
20
30
40
50
60
70
80
90
t d(off) - Nanoseconds
260
800
14
tf
600
VCE = 1250V
12
85
900
650
300
t d(off) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
RG = 10Ω, VGE = 15V
t f - Nanoseconds
tf
10
75
700
340
8
65
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1400
6
55
150
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
1000
170
160
RG - Ohms
1200
190
VCE = 1250V
t f - Nanoseconds
120
550
20
24
t d(off) - Nanoseconds
600
10
tf
700
130
VCE = 1250V
500
22
200
140
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGE = 15V
650
20
800
150
tr
18
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
700
16
IC - Amperes
0
100
RG - Ohms
IXYS REF: B_12N300(4P)06-05-12