High Voltage IGBT For Capacitor Discharge Applications IXGF30N400 VCES = 4000V = 30A IC25 VCE(sat) ≤ 3.1V ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 4000 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 30 A IC110 TC = 110°C 15 A ICM TC = 25°C, VGE = 20V, 1ms 360 A SSOA VGE = 20V, TVJ = 125°C, RG = 2Ω ICM = 300 A (RBSOA) Clamped Inductive Load PC TC = 25°C TJ Maximum Ratings VCE ≤ 0.8 • VCES 160 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 20..120 / 4.5..27 Nm/lb.in. 4000 V~ 5 g TL TSOLD 1.6 mm (0.062 in.) from case for 10s Plastic body for 10s FC Mounting Force VISOL 50/60Hz, 1 minute Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IC = 250μA, VGE = 0V 4000 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = 0.8 • VCES, VGE = 0V Note 2, TJ = 100°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC IC = 30A, VGE = 15V, Note 1 = 90A © 2009 IXYS CORPORATION, All Rights Reserved V 5.0 2 Isolated Tab 5 1 = Gate 2 = Emitter 5 = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages High Power Density Easy to Mount Characteristic Values Min. Typ. Max. BVCES 1 V 50 μA 3 mA ±200 nA 3.1 5.2 V V Applications Capacitor Discharge Pulser Circuits DS99978C(11/09) IXGF30N400 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC = 30A, VCE = 10V, Note 1 IC(ON) VGE = 15V, VCE = 20V, Note 1 Characteristic Values Min. Typ. Max. 14 Cies Coes 23 S 360 A 3040 pF 95 pF 30 pF 135 nC 22 nC 50 nC 55 ns 146 ns 210 ns 514 ns 0.15 30 0.78 °C/W °C/W °C/W VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 30A, VGE = 15V, VCE = 600V Qgc td(on) tr td(off) tf Resistive Switching Times IC = 30A, VGE = 15V, VCE = 1250V, RG = 2Ω RthJC RthCS RthJA ISOPLUS i4-PakTM (HV) Outline Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Tab 4 = Isolated Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF30N400 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J =25ºC 400 60 VGE = 15V 13V 11V 50 320 13V 280 IC - Amperes 9V 40 IC - Amperes VGE = 15V 360 30 7V 20 240 200 11V 160 120 9V 80 10 7V 40 5V 0 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 16 18 20 22 24 26 28 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J =125ºC 2.2 60 VGE = 15V 13V 11V 50 VGE = 15V 2.0 1.8 VCE(sat) - Normalized 9V IC - Amperes 14 40 7V 30 20 1.6 I C = 60A 1.4 I 1.2 = 30A C 1.0 10 5V 0.8 0 I 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 VCE - Volts = 15A 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6.0 80 5.5 70 TJ = 25ºC 5.0 60 4.0 I C IC - Amperes 4.5 VCE - Volts C 0.6 = 60A 3.5 3.0 50 40 TJ = 125ºC 25ºC - 40ºC 30 30A 20 2.5 2.0 10 15A 0 1.5 5 6 7 8 9 10 11 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 IXGF30N400 Fig. 7. Transconductance Fig. 8. Gate Charge 16 40 TJ = - 40ºC 30 25ºC 12 25 125ºC 10 VGE - Volts g f s - Siemens VCE = 600V 14 35 20 15 8 6 10 4 5 2 0 I C = 30A I G = 10mA 0 0 10 20 30 40 50 60 70 80 90 0 20 40 IC - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 10. Capacitance Fig. 9. Reverse-Bias Safe Operating Area 350 10,000 f = 1 MHz Capacitance - PicoFarads 300 IC - Amperes 250 Cies 1,000 200 150 100 50 0 400 TJ = 125ºC Coes 100 RG = 2Ω dV / dt < 10V / ns Cres 10 800 1200 1600 2000 2400 2800 3200 3600 0 4000 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGF30N400 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 13. Resistive Turn-on Rise Time vs. Drain Current 500 500 RG = 2Ω , VGE = 15V 450 450 VCE = 1250V 400 t r - Nanoseconds t r - Nanoseconds 400 350 I D = 60A 300 250 I D = 30A 350 RG = 2Ω , VGE = 15V 300 VCE = 1250V 250 200 200 150 150 100 TJ = 125ºC TJ = 25ºC 100 25 35 45 55 65 75 85 95 105 115 15 125 20 25 30 35 TJ - Degrees Centigrade Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 1,000 td(on) - - - - 55 tf td(off) - - - - t f - Nanoseconds 500 230 VCE = 1250V 450 I C 220 = 30A 400 210 350 200 300 I C 190 = 60A 250 100 10 10 1000 100 180 200 25 35 45 55 RG - Ohms 260 tf 240 TJ = 125ºC, VGE = 15V 230 700 220 600 210 500 200 400 190 300 180 TJ = 125ºC, 25ºC 160 30 35 40 115 170 125 td(off) - - - - VCE = 1250V 1,000 1,000 I C = 30A I C = 60A 170 100 25 105 45 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 50 55 60 t d ( o f f ) - Nanoseconds VCE = 1250V 20 95 10,000 250 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2Ω, VGE = 15V 15 85 10,000 t f - Nanoseconds tf 800 75 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance 1100 900 65 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Drain Current 1000 t d ( o f f ) - Nanoseconds t d ( o n ) - Nanoseconds 100 200 240 RG = 2Ω, VGE = 15V I C = 60A, 30A 1 60 250 550 VCE = 1250V t r - Nanoseconds 50 600 TJ = 125ºC, VGE = 15V 1,000 45 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature 10,000 tr 40 IC - Amperes 100 1 10 100 100 1000 RG - Ohms IXYS REF: G_30N400(8P)11-23-09-C