GenX3TM 300V IGBT IXGA42N30C3 VCES IC110 VCE(sat) tfi typ IXGH42N30C3 IXGP42N30C3 High Speed PT IGBTs for 50-150kHz switching = = ≤ = 300V 42A 1.85V 65ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC110 TC = 110°C (chip capability) 42 A ICM TC = 25°C, 1ms 250 A IA TC = 25°C 42 A EAS TC = 25°C 250 mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load @ ≤ 300V ICM = 84 A PC TC = 25°C 223 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C Md Mounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in. Weight TO-263 TO-247 TO-220 2.5 6.0 3.0 g g g G E TO-247 (IXGH) G G BVCES IC = 250μA, VGE = 0V 300 VGE(th) IC = 250μA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 42A, VGE = 15V, Note1 TJ = 125°C 1.54 1.54 C C (TAB) E C = Collector TAB = Collector Features z z z z 5.0 V 25 μA Optimized for low switching losses Square RBSOA High current handling capability International standard packages 500 μA z ±100 nA z 1.85 V V High power density Low gate drive requirement Applications z z z z z z © 2008 IXYS CORPORATION, All rights reserved C (TAB) Advantages V TJ = 125°C E G = Gate E = Emitter z Characteristic Values Min. Typ. Max. C TO-220 (IXGP) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) C (TAB) High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99885B(07/08) IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC Min. = 0.5 • IC110, VCE = 10V, Note 1 Characteristic Values Typ. Max. 20 33 S 2140 pF 218 pF Cres 60 pF Qg 76 nC Cies Coes VCE = 25V, VGE = 0V, f = 1MHz 15 nC Qgc 26 nC td(on) 21 ns 23 ns mJ Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES tri Inductive Load, TJ = 25°°C Eon IC = 0.5 • IC110, VGE = 15V 0.12 td(off) VCE = 200V, RG = 10Ω 113 tfi Eoff 170 ns 65 120 ns 0.15 0.28 mJ td(on) 21 ns tri 22 ns 0.21 mJ 127 ns 102 ns 0.20 mJ Eon td(off) tfi Inductive Load, TJ = 125°°C IC = 0.5 • IC110, VGE = 15V VCE = 200V, RG = 10Ω Eoff ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.56 °C/W RthJC RthCK TO-247 AD Outline TO-220 TO-247 0.50 0.25 °C/W °C/W TO-220 (IXGP) Outline Note1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 325 90 VGE = 15V 13V 11V 80 275 70 250 9V 60 225 IC - Amperes IC - Amperes VGE = 15V 13V 11V 300 50 40 30 7V 9V 200 175 150 7V 125 100 75 20 50 10 5V 25 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2 4 6 8 10 12 14 16 125 150 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 1.4 90 VGE = 15V 13V 11V 80 VGE = 15V 1.3 I C = 84A I C = 42A 70 VCE(sat) - Normalized IC - Amperes 9V 60 50 40 7V 30 1.2 1.1 1.0 0.9 I 20 = 21A 0.8 10 5V 0 0.7 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 VCE - Volts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 120 3.4 3.2 110 TJ = 25ºC 100 I 2.8 2.6 C = 84A 42A 21A 90 IC - Amperes 3.0 VCE - Volts C 2.4 2.2 2.0 80 TJ = 125ºC 25ºC - 40ºC 70 60 50 40 1.8 30 1.6 20 1.4 10 1.2 0 6 7 8 9 10 11 12 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 8. Gate Charge Fig. 7. Transconductance 16 60 VCE = 150V TJ = - 40ºC 55 14 I C = 42A 50 I G = 10 mA 12 25ºC 40 VGE - Volts g f s - Siemens 45 125ºC 35 30 25 10 8 6 20 15 4 10 2 5 0 0 0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 70 1,000 60 IC - Amperes Capacitance - PicoFarads Cies Coes 50 40 30 100 TJ = 125ºC 20 Cres RG = 10Ω dV / dt < 10V / ns 10 0 10 0 5 10 15 20 25 30 35 50 40 100 150 VCE - Volts 200 250 300 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.2 3.4 Eon - Eoff 3.0 --- 2.0 2.8 TJ = 125ºC , VGE = 15V VCE = 200V Eoff 1.6 RG = 10Ω , VGE = 15V 1.0 Eoff - MilliJoules 1.2 1.4 1.4 1.2 1.2 TJ = 125ºC 1.0 1.0 0.8 0.8 0.6 0.6 0.8 TJ = 25ºC 0.4 I C = 42A 0.6 0.2 10 15 20 25 30 35 40 45 50 55 60 65 70 0.4 0.2 0.0 0.0 0.0 25 30 35 40 RG - Ohms 50 1.3 200 2.0 1.2 190 tf 180 TJ = 125ºC, VGE = 15V I C = 84A 1.1 0.8 0.7 0.8 0.6 I C = 42A 0.5 0.4 0.2 0.0 35 45 55 65 t f - Nanoseconds VCE = 200V 25 75 85 95 105 115 600 450 160 400 I 150 C = 42A 300 I 130 = 84A 250 150 0.2 125 100 100 10 15 20 25 30 35 40 45 50 55 60 65 70 75 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 170 130 110 125 100 90 120 80 115 TJ = 25ºC t f - Nanoseconds TJ = 125ºC 135 td(off) - - - - 160 tf 150 RG = 10Ω , VGE = 15V 130 VCE = 200V 140 130 125 120 I C = 84A 110 120 100 90 115 I C = 42A 80 60 50 110 20 30 40 50 60 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 70 80 70 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 110 125 t d(off) - Nanoseconds t f - Nanoseconds C 0.3 120 70 350 140 200 135 130 500 110 t d(off) - Nanoseconds VCE = 200V 550 120 td(off) - - - - 140 85 0.4 140 RG = 10Ω , VGE = 15V 80 RG - Ohms 170 tf 75 170 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 150 70 td(off) - - - - TJ - Degrees Centigrade 160 65 t d(off) - Nanoseconds RG = 10Ω , VGE = 15V 0.9 - MilliJoules 1.2 Eon on Eoff E ---- 1.4 0.6 60 VCE = 200V 1.0 1.0 55 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.2 1.6 Eoff - MilliJoules 45 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 1.8 0.4 0.2 20 75 - MilliJoules 1.4 - MilliJoules 1.6 on 1.8 1.6 VCE = 200V = 84A 2.0 1.8 on C Eon E I 2.2 ---- 1.8 2.4 E Eoff - MilliJoules 2.6 2.0 IXGA42N30C3 IXGH42N30C3 IXGP42N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 200 100 90 TJ = 125ºC, VGE = 15V = 84A C 120 60 100 I C 50 = 42A 80 40 60 30 40 20 20 10 10 15 20 25 30 35 40 45 50 55 60 65 70 25ºC < TJ < 125ºC 100 t r - Nanoseconds 70 30 RG = 10Ω , VGE = 15V t d(on) - Nanoseconds 140 td(on) - - - - tr 120 80 VCE = 200V I 32 28 VCE = 200V 80 26 60 24 40 22 20 20 0 18 20 75 RG - Ohms t d(on) - Nanoseconds 160 t r - Nanoseconds td(on) - - - - tr 180 140 25 30 35 40 45 50 55 60 65 70 75 80 85 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 100 32 I C = 84A 30 80 28 td(on) - - - - tr 70 26 RG = 10Ω , VGE = 15V VCE = 200V 60 24 50 I C 22 = 42A 40 t d(on) - Nanoseconds t r - Nanoseconds 90 20 30 25 35 45 55 65 75 85 95 105 115 18 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_42N30C3(55)8-05-08-A