Low VCE(sat) IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 56 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) TO-247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Symbol Test Conditions VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 6 4 © 2003 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE = IC90, VGE = 15 V °C 300 2.5 TJ = 25°C TJ = 125°C 5.5 V 100 500 µA µA ±100 nA 2.0 V VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V TO-268 (IXGT) G C (TAB) E TO-247 AD (IXGH) G G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z International standard packages z Low VCE(sat) - for minimum on-state conduction losses z High current handling capability z MOS Gate turn-on - drive simplicity Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode power supplies Advantages z Easy to mount with 1 screw (isolated mounting screw hole) z Low losses, high efficiency z High power density DS98570A(08/03) IXGH 28N60B IXGT 28N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 15 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res 25 S 1500 pF 130 pF 42 pF 68 100 nC 15 30 nC Qgc 20 40 nC td(on) 15 Qg Qge tri IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°°C ns 25 IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω ns 175 400 ns 260 400 ns Eoff 2 4 mJ td(on) 15 td(off) tfi tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Ω Eoff 25 ns 0.2 mJ 400 ns 400 ns 3 mJ RthJC RthCK ns 0.83 K/W TO-247 0.25 TO-247 AD Outline 1 2 3 Dim. Terminals: 1 - Gate 2 - Collector 3 - Emitter Tab-Collector Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline K/W Terminals: 1 - Gate 3 - Emitter 2 - Collector Tab - Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 28N60B IXGT 28N60B Fig. 1. Output Characte ristics @ 25 Deg. C 60 240 VGE = 15V 13V 11V 9V 50 VGE = 15V 200 40 I C - Amperes I C - Amperes Fig. 2. Extended Output Characte ristics @ 25 de g. C 30 7V 20 10 13V 160 11V 120 9V 80 40 7V 5V 0 5V 0 0.5 1 1.5 2 2.5 3 0 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 4 8 10 12 V C E - Volts 14 16 18 20 1.6 VGE = 15V 13V 11V 9V V GE = 15V 1.5 V C E (sat)- Normalized 50 40 30 7V 20 10 I C = 56A 1.4 1.3 1.2 I C = 28A 1.1 1.0 0.9 I C = 14A 0.8 5V 0 0.7 0.5 1 1.5 2 2.5 3 -50 3.5 -25 V CE - Volts 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 90 5 TJ = 25ºC 4.5 80 70 4 I C = 56A 28A 14A 3.5 3 I C - Amperes VC E - Volts 6 Fig. 4. De pende nce of V CE(sat) on Tem perature 60 I C - Amperes 2 2.5 60 50 40 30 2 20 1.5 10 TJ = 125ºC 25ºC -40ºC 0 1 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 150 IXGH 28N60B IXGT 28N60B Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 10.0 35 8.0 E off - milliJoules g f s - Siemens 25 TJ = 125ºC VGE = 15V VCE = 480V 9.0 TJ = -40ºC 25ºC 125ºC 30 20 15 10 I C = 56A 7.0 6.0 5.0 I C = 28A 4.0 3.0 5 I C = 14A 2.0 0 0 10 20 30 40 50 60 70 80 1.0 90 10 I C - Amperes 30 6.0 130 150 I C = 56A 4.0 TJ = 125ºC I C = 28A 3.0 3.0 2.0 2.0 TJ = 25ºC 1.0 1.0 0.0 0.0 10 20 30 40 50 I C - Amperes 25 60 35 600 td(off) tfi - - - - - TJ = 125ºC VGE = 15V VCE = 480V 900 800 700 600 I C = 14A I C = 56A 500 400 I C = 28A 300 65 75 I C = 14A 85 95 105 115 125 td(off) tfi - - - - - - 550 Switching Time - nanosecond 1000 55 Fig. 12. Dependence of Sw itching Tim e on IC 1200 1100 45 TJ - Degrees Centigrade Fig. 11. Dependence of Sw itching Tim e on RG Switching Time - nanosecond 110 5.0 5.0 4.0 R G = 10Ω R G = 82Ω - - - VGE = 15V VCE = 480V 7.0 E off - milliJoules E off - MilliJoules 6.0 90 8.0 R G = 10Ω R G = 82Ω - - - VGE = 15V VCE = 480V TJ = 125ºC 7.0 70 R G - Ohms Fig. 10. Dependence of Eoff on Tem perature Fig. 9. Dependence of Eoff on IC 8.0 50 R G = 10Ω VGE = 15V VCE = 480V 500 450 400 TJ = 125ºC 350 300 250 TJ = 25ºC 200 150 200 10 30 50 70 90 R G - Ohms 110 130 150 10 20 30 40 I C - Amperes 50 60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 28N60B IXGT 28N60B Fig. 13. Dependence of Sw itching Tim e on Tem perature 500 15 td(off) tfi - - - - - R G = 10Ω VGE = 15V VCE = 480V 400 350 300 VCE = 300V IC = 28A IG = 10mA 12 I C = 56A VG E - Volts 450 Switching Time - nanosecond Fig. 14. Gate Charge I C = 14A 9 6 I C = 28A 250 3 200 I C = 56A 150 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1 0.5 0.1 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000