IXGK120N60B IXGX120N60B HiPerFASTTM IGBTs VCES = 600V IC90 = 120A VCE(sat) ≤ 2.1V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G C E Tab VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ILRMS ICM TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms 200 120 76 300 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2.4Ω Clamped Inductive Load ICM = 200 @ 0.8 • VCES A V PC TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C z 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 PLUS247 (IXGX) G z z BVCES IC = 1mA, VGE = 0V 600 VGE(th) IC = 4mA, VCE = VGE 2.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ± 20V VCE(sat) IC z = IC90, VGE = 15V, Note 1 V z © 2010 IXYS CORPORATION, All Rights Reserved ±400 nA 2.1 PLUS 247TM Package for Clip or Spring Mounting Space Savings High Power Density Applications 2 mA V E = Emitter Tab = Collector Very High Current, Fast Switching IGBT Low VCE(sat) - for Minimum On-State Conduction Losses MOS Gate turn-on - Drive Simplicity V 200 μA TJ = 125°C IGES 5.5 Tab Advantages z Characteristic Values Min. Typ. Max. E G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C z z z z AC Motor Speed Drives DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies DS98602C(08/10) IXGK120N60B IXGX120N60B Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 50 75 S VCE = 25V, VGE = 0V, f = 1MHz 11 680 190 nF pF pF IC = IC90, VGE = 15V, VCE = 0.5 • VCES 350 72 131 nC nC nC 60 ns 45 2.4 ns mJ Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C IC = 100A,VGE = 15V VCE = 0.8 • VCES, RG = 2.4Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff TO-264 AA ( IXGK) Outline Inductive Load, TJ = 125°C IC = 100A,VGE = 15V VCE = 0.8 • VCES, RG = 2.4Ω Note 2 RthJC RthCS 200 360 160 280 ns 5.5 9.6 mJ Back Side Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ns 60 60 4.8 290 250 8.7 ns ns mJ ns ns mJ 0.15 0.19 °C/W °C/W Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 1 - Gate 2, 4 - Collector 3 - Emitter Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .190 .205 .090 .100 .075 .085 b b1 b2 1.14 1.91 2.92 .045 .075 .115 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 A A1 A2 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 1.40 2.13 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 6,727,585 6,759,692 .055 .084 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXGK120N60B IXGX120N60B Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Exte nde d Output Characte ris tics @ 25 ºC 150 300 VGE = 15V 125 13V 11V 250 9V 100 I C - Amperes I C - Amperes VGE = 15V 13V 11V 75 7V 50 25 200 9V 150 7V 100 50 5V 5V 0 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 0.5 1 V C E - Volts Fig. 3. Output Characteristics @ 125 ºC 2.5 3 3.5 4 1.2 VGE = 15V VGE = 15V 1.2 13V 11V I C = 150A 1.1 9V VC E (sat)- Normalized 125 I C - Amperes 2 V C E - Volts Fig. 4. De pe nde nce of V CE(sat) on Te m pe rature 150 100 7V 75 50 1.1 1.0 1.0 I C = 100A 0.9 0.9 0.8 25 5V I C = 50A 0.8 0 0.7 0.6 0.8 1 1.2 1.4 1.6 V CE - Volts 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 7.5 8 TJ - Degrees Centigrade Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em itte r voltage Fig. 6. Input Adm ittance 180 3.6 TJ = 25ºC 3.4 160 3.2 140 3 I C = 150A 2.8 100A 50A 2.6 I C - Amperes VC E - Volts 1.5 2.4 2.2 120 100 TJ = 125ºC 80 25ºC 60 -40ºC 40 2 20 1.8 0 1.6 6 7 8 9 10 11 V G E - Volts 12 © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4 4.5 5 5.5 6 6.5 V G E - Volts 7 IXGK120N60B IXGX120N60B Fig. 8. Dependence of Turn-off Fig. 7. Transconductance 10 140 9 TJ = 125ºC 8 VGE = 15V TJ = -40ºC 120 25ºC Eo f f - milliJoules g f s - Siemens Energy Loss on RG 160 125ºC 100 80 60 VCE = 480V 7 6 5 4 40 3 20 2 I C = 50A 1 0 0 20 40 60 80 100 120 140 160 2 180 3 4 5 6 7 8 9 10 R G - Ohms I C - Amperes Fig. 9. Dependence of Turn-Off Fig. 10. Depende nce of Turn-off Energy Loss on Tem perature Energy Loss on IC 5 6 R G = 2.7Ω 5 VGE = 15V 5 TJ = 125ºC VCE = 480V 4 4 Eo f f - milliJoules 5 Eo f f - MilliJoules I C = 100A TJ = 25ºC 3 3 I C = 100A R G = 2.7Ω 4 VGE = 15V 4 VCE = 480V 3 3 I C = 50A 2 2 2 2 1 50 55 60 65 70 75 80 I C - Amperes 85 90 95 100 25 Fig. 11. Dependence of Turn-off 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 Fig. 12. Dependence of Turn-off Sw itching Tim e on RG 700 35 Sw itching Tim e on IC 350 tfi - - - - - - I C = 50A 100A TJ = 125ºC 500 Switching Time - nanoseconds Switching Time - nanoseconds td(off) 600 VGE = 15V VCE = 480V 400 300 I C = 100A 50A 200 300 td(off) tfi - - - - - 250 R G = 2.7Ω 200 VGE = 15V TJ = 125ºC TJ = 25ºC VCE = 480V 150 100 50 100 2 3 4 5 6 R G - Ohms 7 8 9 10 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 50 60 70 80 I C - Amperes 90 100 IXGK120N60B IXGX120N60B Fig. 13. De pe nde nce of Turn-off Sw itching Tim e on Te m pe rature Fig. 14. Gate Charge 350 16 td(off) I C = 100A , tfi - - - - - I C = 100A 12 R G = 2.7Ω, VGE = 15V 250 VCE = 480V 200 150 I C = 100A I G = 10mA 10 8 6 4 50A 100 VCE = 300V 14 300 VG E - Volts Switching Time - nanoseconds I C = 50A 2 50 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 100 200 300 400 500 Q G - nanoCoulombs Fig. 16. Reve rse -Bias Safe Ope rating Area Fig. 15. Capacitance 100000 220 f = 1 MHz 200 160 10000 I C - Amperes Capacitance - p F 180 C ies C oes 1000 140 120 100 80 60 40 20 C res 100 TJ = 125ºC R G = 2.7Ω dV/dT < 5V/ns 0 0 5 10 15 20 25 V C E - Volts 30 35 40 100 150 200 250 300 350 400 450 500 550 600 V C E - Volts Fig. 17. Maxim um Trans ie nt Therm al Re s is tance R( t h ) J C - ºC / W 1 0.1 0.01 1 © 2010 IXYS CORPORATION, All Rights Reserved 10 Pulse Width - milliseconds 100 1000 IXYS REF: G_120N60B(9X)