JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test otherwise conditions 1 2 3 specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μA，IC=0 7 V Collector cut-off current ICBO VCB= 600 V , IE=0 100 μA Collector cut-off current ICEO VCE= 400 V , IB=0 200 μA Emitter cut-off current IEBO VEB= 7 V , 100 μA hFE（1） VCE= 20 hFE（2） VCE= 10V, IC= 0.25 mA Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 m A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10m A 1.2 V mA , IB=0 IC=0 V, IC= 20m A 10 70 DC current gain 5 VCE= 20 V, IC=20mA Transition frequency f 8 T MHz f = 1MHz Fall time t Storage time tS f IC=50mA, IB1=-IB2=5mA, 0.3 μs VCC=45V 1.5 μs CLASSIFICATION OF h FE(1) Range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70 TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015