JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR（ NPN ） TO—251 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test otherwise 1 2 3 specified） conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA， IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 6 V mA， IB=0 Collector cut-off current ICBO VCB= 600 V， IE=0 100 µA Emitter cut-off current IEBO VEB= 6 V， IC=0 100 µA hFE（1） VCE= 10 V, IC= 200 m A 9 40 hFE（2） VCE= 10 V, IC=250 µA 5 Collector-emitter saturation voltage VCE(sat) IC=200m A, IB= 40 m A 0.8 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40 m A 1.1 V DC current gain VCE=10V, Transition frequency fT Fall time tf IC=1A, Storage time ts VCC=100V Ic=100mA f =1MHz 5 MHz IB1=-IB2=0.2A 0.5 µs 2.5 µs CLASSIFICATION OF h FE(2) Rank Range 9-15 15-20 20-25 25-30 30-35 35-40 TO-251 PACKAGE OUTLINE DIMENSIONS D A D1 E B C1 L b1 b e A1 e1 Symbol C Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.200 2.400 0.087 0.094 A1 1.020 1.270 0.040 0.050 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 5.700 0.213 0.224 0.091TYP 2.300TYP e e1 4.500 4.700 0.177 0.185 L 7.500 7.900 0.295 0.311