JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF421 BF423 TRANSISTOR （PNP） TO—92 FEATURES Power dissipation PCM: 0.625W （Tamb=25℃） Collector current ICM: -50mA Collector-base voltage V(BR)CBO : BF421 -300 V BF423 -250 V 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter unless otherwise specified） Symbol Test conditions MIN VCBO Ic=-100μA ， IE=0 -300 -250 V Collector-emitter breakdown voltage BF421 BF423 VCEO IC= -1mA , IB=0 -300 -250 V Emitter-base breakdown voltage VEBO IE=-100μA， IC=0 Collector cut-off current ICBO VCB=-200 V , IE=0 -0.01 μA Emitter cut-off current IEBO VEB=-5 V , -0.05 μA DC current gain hFE VCE=-20 V, IC=-25m A -0.6 V Collector-base breakdown voltage Collector-emitter saturation voltage Transition frequency BF421 BF423 IC=-30 mA, IB=- 5mA fT VCE=-10V, IC= -10mA MAX UNIT V -5 IC=0 VCE(sat) TYP 50 60 MHz TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015