JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4075 SOT-323 TRANSISTOR (NPN) FEATURES 1. BASE 2. EMITTER z z z z 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS* TA=25â unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PD Total Device Dissipation 100 mW TJ, Tstg Junction and Storage Temperature -55-125 â ELECTRICAL CHARACTERISTICS (Tamb=25â Parameter Symbol unless Test otherwise specified) conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = 100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE DC current gain VCE= 6V, IC=2mA 70 700 VCEsat IC=100mA, IB= 10mA fT VCE=10V, IC= 1mA Collector output capacitance Cob VCE=10V, IE=0, f=1MHz 3.5 dB Noise figure NF VCE=6V,IE=0.1mA, f=1KHz,RG=10KâĤ 10 dB Collector-emitter saturation voltage Transition frequency 0.25 80 MHz CLASSIFICATION OF hFE Rank Range Marking V O Y GR BL 70~140 120~240 200~400 350~700 LO LY LGR LBL Typical Characteristics KTC4075