JMnic Product Specification 2SB1165 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1722 ・Low collector saturation voltage ・Fast switching time APPLICATIONS ・For use in relay drivers,high-speed inverters,converters. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -5 A ICM Collector current-Peak -8 A PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1165 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-10μA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.28 -0.55 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -0.95 -1.3 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 hFE-2 DC current gain IC=-4A ; VCE=-2V 35 Transition frequency IC=-1A ; VCE=-5V 130 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-10V 60 pF 50 ns 450 ns 20 ns fT COB CONDITIONS MIN TYP. MAX UNIT 400 Switching times ton Turn-on time tstg Storage time tf IC=-2A; IB1=-IB2=-0.2A VCC=25V Fall time hFE-1 Classifications Q R S T 70-140 100-200 140-280 200-400 2 JMnic Product Specification 2SB1165 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3