JMNIC 2SD1062

Product Specification
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2SD1062
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Complement to type 2SB826
・Wide area of safe operation
APPLICATIONS
・Relay drivers,
・High-speed inverters,
・Converters
・General high-current switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
12
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD1062
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=6A, IB=0.3A
0.4
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=5A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
10
MHz
0.10
μs
0.05
μs
1.20
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5.0A IB1=- IB2=0.5A
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
JMnic
Product Specification
www.jmnic.com
2SD1062
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic