JMNIC 2SB1015

JMnic
Product Specification
2SB1015
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・Collector power dissipation
:[email protected]=25℃
・Low collector saturation voltage
・Complement to type 2SD1406
APPLICATIONS
・For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
-3
A
-0.5
A
IC
Collector current
IB
Base current
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1015
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(BR)
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.7
V
VBE
Base-emitter voltage
IC=-0.5A ;VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-100
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
60
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Transition frequency
IC=-0.5A; VCE=-5V
9
MHz
Collector output capacitance
f=1MHz ; VCB=-10V
150
pF
0.4
μs
1.7
μs
0.5
μs
fT
COB
CONDITIONS
MIN
TYP.
MAX
-60
UNIT
V
200
Switching times
‹
ton
Trun-on time
ts
Storage time
tf
Fall time
RL=15Ω;VCC=-30V
IB1=-IB2=-0.2A
Duty cycle≤1%
hFE-1 Classifications
O
Y
60-120
100-200
2
JMnic
Product Specification
2SB1015
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
JMnic
Product Specification
2SB1015
Silicon PNP Power Transistors
4