JMNIC 2SA1011

JMnic
Product Specification
2SA1011
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SC2344
APPLICATIONS
・High voltage switching ,
・Audio frequency power amplifier;
・100W output predriver applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-180
V
VCEO
Collector-emitter voltage
Open base
-160
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1.5
A
ICM
Collector current-Peak
-3.0
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1011
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,RBE=∞
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-0.5
V
VBE
Base-emitter voltage
IC=-10mA ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
μA
hFE
DC current gain
IC=-0.3A ; VCE=-5V
fT
Transition frequency
IC=-50mA ; VCE=-10V
100
MHz
Cob
Output capacitance
IE=0; f=1MHz ; VCB=-10V
30
pF
0.29
μs
0.48
μs
0.19
μs
VCEsat
CONDITIONS
MIN
TYP.
60
MAX
UNIT
200
Switching times resistive load
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-0.5A ;IB1=-IB2=-50mA
VCC=20V; RL=40Ω
hFE Classifications
D
E
60-120
100-200
2
JMnic
Product Specification
2SA1011
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SA1011
Silicon PNP Power Transistors
4