Product Specification www.jmnic.com 2SD1634 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・High speed switching ・Good linearity of hFE APPLICATIONS ・Power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter 100 VCEO Collector-emitter voltage Open base 100 VEBO Emitter-base voltage Open collector IC 7 V Collector current (DC) 8 A ICM Collector current-Peak 12 A IB Base current (DC) 0.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1634 Silicon Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 100 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , IB=0 VCEsat Collector-emitter saturation voltage IC=5A IB=5mA 1.5 V VBEsat Emitter-base saturation voltage IC=5A IB=5mA 2.0 V ICBO Collector cut-off current VCB=100V IE=0 100 μA ICEO Collector cut-off current VCE=100V IB=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=5A ; VCE=3V 1500 V 10000 Switching times ton Turn-on time ts Storage time tf Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V hFE Classifications Q P 1500-6000 5000-10000 JMnic 3.0 μs 5.0 μs 3.0 μs Product Specification www.jmnic.com 2SD1634 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic