SEMICONDUCTOR KMA7D0NP30Q TECHNICAL DATA N and P-CH Trench MOSFET General Description Switching regulator and DC-DC converter applications. It s mainly suitable for power management in notebook, portable equipment and battery powered systems. A FEATURES N-Channel 8 5 B1 B2 : VDSS=30V, ID=7A. 1 T L 4 : RDS(ON)=17m (Typ.) @ VGS=10V. : RDS(ON)=22m (Typ.) @ VGS=4.5V. P-Channel : VDSS=-30V, ID=-5.5A. : RDS(ON)=35m (Typ.) @ VGS=-10V. H : RDS(ON)=51m (Typ.) @ VGS=-4.5V. D Super high dense cell design for extermely low RDS(ON). G P DIM A B1 B2 D G H L P T MILLIMETERS _ 0.1 4.9 + _ 0.1 3.9 + _ 0.2 6.0 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.5 + _ 0.2 0.75 + 1.27 0.5 MAX Reliable and rugged. FLP-8 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL N-Ch P-Ch UNIT Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS 20 DC ID * 7 -5.5 Pulsed IDP 28 -20 Drain Curren Drain Power Dissipation Ta=25 PD * Ta=100 2 W 0.8 150 Tstg -55 150 RthJA * 62.5 Storage Temperature Range Thermal Resistance, Junction to Case A Tj Maximum Junction Temperature V 20 /W * : Surface Mounted on FR4 Board, t 10sec. D1 D1 S2 PIN CONNECTION (TOP VIEW) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 N-Channel MOSFET 2005. 10. 25 Revision No : 3 D2 D2 P-Channel MOSFET 1/8 KMA7D0NP30Q ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. N-Ch 30 - - P-Ch -30 - - VDS=24V, VGS=0V N-Ch - - 1 VDS=-24V, VGS=0V P-Ch - - -1 N-Ch 1 1.5 2 P-Ch -1 -1.5 -2 N-Ch P-Ch - - - 17 24 - 22 30 - 35 56 - 51 78 UNIT Static Drain-Source Breakdown Voltage BVDSS IDSS Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current V ID= 250 A, VGS=0V Vth VDS=VGS, ID= IGSS VGS= V 250 A 20V, VDS=0V VGS=10V, ID=7A RDS(ON)(Note 1) Drain-Source ON Resistance VSD (Note 1) 100 nA N-Ch VGS=4.5V, ID=5A VGS=-10V, ID=-5.5A m P-Ch VGS=-4.5V, ID=-4A Source-Drain Diode Forward Voltage A IDR=2A, VGS=0V N-Ch - 0.7 1.3 IDR=-2.3A, VGS=0V P-Ch - -0.7 -1.3 N-Ch - 19 28 P-Ch - 33 43 N-Ch - 1.6 - P-Ch - 5 - N-Ch - 3.6 - P-Ch - 4 - N-Ch - 11 20 P-Ch - 12 24 N-Ch - 17 28 P-Ch - 15 29 N-Ch - 36 62 P-Ch - 35 60 N-Ch - 20 36 P-Ch - 15 30 N-Ch - 835 - P-Ch - 950 - N-Ch - 15 - P-Ch - 110 - N-Ch - 145 - P-Ch - 160 - V Dynamic (Note 2) Qg Total Gate Charge N-Channel VDS=15V, ID=7A VGS=10V Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay time tr Turn-on Rise time nC P-Channel VDS=-15V, ID=-5.5A VGS=-10V (Fig.1) N-Channel VDD=15V, ID=2A VIN=10V, RG=6 RL=7.5 ns td(off) Turn-off Delay time tf Turn-off Fall time Ciss Input Capacitance P-Channel VDD=-15V, ID=-2A VIN=-10V, RG=6 RL=7.5 N-Channel VDS=25V, VGS=0V f=1.0MHz Crss Reverse Transfer Capacitance Coss Output Capacitance Note 1) Pulse test : Pulse width 300 (Fig.2) pF P-Channel VDS=-25V, VGS=0V f=1.0MHz , duty cycle 2% Note 2) Guaranteed by design, not subject to production testing. 2005. 10. 25 Revision No : 3 2/8 KMA7D0NP30Q N-Channel ID - VDS ID - VGS 30 VGS = 4, 5, 6, 7, 8, 9, 10V 25 Drain Current ID (A) Drain Current ID (A) 30 20 VGS=3V 15 10 5 VGS=2V 0 0 1 2 25 20 15 Tj=125 C 10 Tj= -55 C Tj=25 C 5 0 3 4 5 0 1 2 5 RDS(ON) - ID 1.6 40 IDS= 250µA On - Resistance RDS(ON) (mΩ) Normalized Threshold Voltage Vth (V) Vth - Tj 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 35 30 VGS = 4.5V 25 20 VGS = 10V 15 10 5 -50 -25 0 25 50 75 5 0 100 125 150 1.8 Normalized On Resistance 10 Tj=150 C Tj=25 C 0.1 0.2 0.4 0.6 0.8 30 RDS(ON) - Tj 30 0.0 25 Drain Current ID (A) IS - VSD 1 20 15 10 Junction Temperature Tj ( C ) Reverse Drain Current IS (A) 4 Gate - Source Voltage VGS (V) Drain - Source Voltage VDS (V) 1.0 Source - Drain Voltage VSD (V) 2005. 10. 25 3 Revision No : 3 1.2 1.4 1.6 VGS = 10V IDS = 7A 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperture Tj ( C ) 3/8 KMA7D0NP30Q Qg- VGS C - VDS 10 Gate - Source Voltage VGS (V) 1400 Frequency=1MHz Capacitance (pF) 1200 1000 Ciss 800 600 400 Coss 200 Crss 0 VDS=15V IDS=7A 8 6 4 2 0 10 0 20 30 4 0 Drain - Source Voltage VDS (V) 8 20 16 12 Gate - Charge Qg (nC) Safe Operation Area Rth 101 R DS (O N) 300 µs t mi Li 1ms 10ms 100 100ms 1s 10-1 10-2 DC Ta= 25 C 10-2 10-1 100 101 Drain - Source Voltage VDS (V) 2005. 10. 25 Revision No : 3 102 Normalized Transient Thermal Resistance Drain Current ID (A) 102 100 Duty=0.5 0.2 10-1 0.1 0.05 0.02 le 0.01 g Sin 10-2 10-3 10-4 Pu lse Mounted on FR4 Board RthJA : 62.5 C /W 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (sec) 4/8 KMA7D0NP30Q P-Channel ID - VDS ID - VGS -24 VGS=-4V -20 Drain Current ID (A) Drain Current ID (A) VGS = -5,-6,-7,-8,-9,-10V -16 -12 -8 VGS=-3V -4 0 0 -2 -4 -6 -8 -10 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 Tj=125 C Tj= -55 C Tj=25 C -1 Drain - Source Voltage VDS (V) -2 -1.75 80 IDS= -250µA On - Resistance RDS(ON) (mΩ) Normalized Threshold Voltage Vth (V) -5 RDS(ON) - ID -1.50 -1.25 -1.00 -0.75 -0.50 -0.25 0.00 -75 70 VGS=-4.5V 60 50 40 VGS=-10V 30 20 10 -50 -25 0 25 50 75 -4 0 100 125 150 1.8 Normalized On Resistance Tj=150 C Tj=25 C -1 -0.4 -0.6 -0.8 -1.0 Source - Drain Voltage VSD (V) Revision No : 3 -20 -24 RDS(ON) - Tj -10 -0.2 -16 Drain Current ID (A) IS - VSD -0.1 0.0 -12 -8 Junction Temperature Tj ( C ) Reverse Drain Current IS (A) -4 Gate - Source Voltage VGS (V) Vth - Tj 2005. 10. 25 -3 -1.2 -1.4 1.6 VGS = -10V IDS = -5.5A 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperture Tj ( C ) 5/8 KMA7D0NP30Q Qg- VGS C - VDS -10 Gate - Source Voltage VGS (V) 1500 Frequency=1MHz Capacitance (pF) 1250 Ciss 1000 750 500 Coss 250 Crss 0 VDS = -15V IDS = -5.5A -8 -7 -6 -5 -4 -3 -2 -1 0 -10 0 -9 -20 -30 0 5 Drain - Source Voltage VDS (V) 10 15 20 25 30 35 Gate - Charge Qg (nC) Safe Operation Area Rth -10 R DS N (O ) it Lim 1ms 10ms -1 100ms 1s -0.1 DC Ta= 25 C -0.01 -0.01 -0.1 -1 -10 Drain - Source Voltage VDS (V) 2005. 10. 25 Revision No : 3 -100 Normalized Transient Thermal Resistance Drain Current ID (A) -100 100 Duty = 0.5 0.2 10-1 0.1 0.05 0.02 lse 0.01 le g Sin 10-2 10-3 10-4 Pu Mounted on FR4 Board RthJA : 62.5 C /W 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (sec) 6/8 KMA7D0NP30Q N -Channel Fig. 1 Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 2 Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω VDS 10 V VGS VGS 10% td(on) tr ton 2005. 10. 25 Revision No : 3 td(off) tf toff 7/8 KMA7D0NP30Q P -Channel Fig. 1 Gate Charge VGS -10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig. 2 Resistive Load Switching RL td(on) VGS 0.5 VDSS ton tr td(off) toff tf 10% 6Ω VDS -4.5 V VGS VDS 2005. 10. 25 Revision No : 3 90% 8/8