KEC KMB8D0P30QA

SEMICONDUCTOR
KMB8D0P30QA
TECHNICAL DATA
P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Load Switch and Battery pack.
H
T
P
D
L
G
FEATURES
A
VDSS=-30V, ID=-8A.
Drain to Source On Resistance.
RDS(ON)=20m (Max.) @ VGS=-10V
8
RDS(ON)=35m (Max.) @ VGS=-4.5V
5
B1 B2
1
MOSFET Maximum Ratings (Ta=25
Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current
[email protected]=25
@Ta=25
V
A
IDP
-40
A
PD
2.5
W
Tj
150
Tstg
-55~150
RthJA
50
(Note 1)
Storage Temperature Range
(Note 1)
20
V
-8
Maximum Junction Temperature
Thermal Resistance, Junction to Ambient
30
MILLIMETERS
_ 0.2
4.85 +
_ 0.2
3.94 +
_ 0.3
6.02 +
_ 0.1
0.4 +
0.15+0.1/-0.05
_ 0.2
1.63 +
_ 0.2
0.65 +
1.27
0.20+0.1/-0.05
UNIT
ID
(Note 1)
Pulsed
Drain Power Dissipation
4
DIM
A
B1
B2
D
G
H
L
P
T
FLP-8
/W
KMB8D0P
30QA
Note1) Surface Mounted on 1″ 1″FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
2009. 6. 15
1
8
2
7
3
6
4
5
Revision No : 0
1/4
KMB8D0P30QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
) UNLESS OTHERWISE NOTED
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
BVDSS
VGS=0V, ID=-250 A
-30
-
-
V
Drain Cut-off Current
IDSS
VGS=0V, VDS=-24V
-
-
-1
A
Gate to Source Leakage Current
IGSS
VGS= 20V, VDS=0V
-
-
100
Gate to Source Threshold Voltage
Vth
VDS=VGS, ID=-250 A
-1.0
-
-3.0
Drain to Source Breakdown Voltage
RDS(ON)
Drain to Source On Resistance
gfs
Forward Transconductance
VGS=-10V, ID=-8A
(Note2)
-
15
20
VGS=-4.5V, ID=-5A
(Note2)
-
25
35
VDS=-5V, ID=-8A
(Note2)
-
6
-
-
1371
-
-
295
-
-
176
-
-
28.2
-
-
15.0
-
-
5.0
-
nA
V
m
S
Dynamic
Input Capaclitance
Ciss
Ouput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
VGS=10V
VGS=4.5V
VDS=-15V, VGS=0V, f=1MHz
(Note2)
Qg
VDS=-15V, VGS=-10V, ID=-8A
(Note2)
nC
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
-
6.4
-
Turn-On Delay Time
td(on)
-
11.2
-
-
5.8
-
-
65.0
-
-
25.0
-
-
-0.75
-1.2
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDS=-15V, VGS=-10V
ID=-8A, RG=1.6
(Note2)
tf
Turn-Off Fall Time
pF
ns
Source to Drain Diode Ratings
Source to Drain Forward Voltage
Note2) Pulse Test : Pulse Width 300
2009. 6. 15
VSD
VGS=0V, IS=-1.7A
(Note2)
V
, Duty Cycle 2%
Revision No : 0
2/4
KMB8D0P30QA
-40
VGS=-10V -5.0V
-4.5V
Drain Current ID (A)
-4.0V
-30
-20
-3.5V
-10
-3.0V
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Drain to Source On Resistance RDS(ON) (mΩ)
Fig2. RDS(on) - ID
Fig1. ID - VDS
50
40
30
VGS=-4.5V
20
VGS=-10V
10
0
0
-10
Drain to Source Voltage VDS (V)
Normalized On Resistance RDS(ON)
Drain Current ID (A)
-30
-20
-10
Tj=25 C
Tj=-55 C
0
-1
-2
-3
-4
-5
2.0
1.8
1.6
1.4
VGS=-4.5V, ID=-18A
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150 175
Junction Temperature Tj ( C )
Fig6. IS - VSD
Fig5. Vth - Tj
102
1.6
VDS = VGS, ID = -250µA
Reverse Drain Current IS (A)
Normalized Gate to Source Threshold Voltage
VGS=-10V, ID=-19A
1.2
Gate to Source Voltage VGS (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150 175
Junction Temperature Tj ( C )
2009. 6. 15
-40
Fig4. RDS(ON) - Tj
-40
0
-30
Drain Current ID (A)
Fig3. ID - VGS
Tj=150 C
-20
Revision No : 0
101
Tj=150 C
Tj=25 C
100
Tj=-55 C
10-1
10-2
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage VSD (V)
3/4
Fig8. C - VDS
Fig7. RDS(ON) - VGS
104
50
40
30
Tj=150 C
20
Tj=25 C
Ciss
103
Coss
Crss
102
10
0
-2
-4
-6
-8
101
-10
0
-5
-10
-15
-20
-25
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Fig9. VGS - Qg
Fig10. Safe Operation Area
-30
-102
-10
ID = -8A
-8
Drain Current ID (A)
Gate to Source Voltage VGS (V)
f=1MHz
ID=-8A
Capacitance C (pF)
Drain to Source On Resistance RDS(ON) (mΩ)
KMB8D0P30QA
-6
-4
-2
100us
-101
M
L) I
IT
1ms
N
10ms
O
S(
-100
RD
100ms
-10-1
DC
VGS= -10V
SINGLE PULSE
TA= 25 C
0
0
10
20
30
-10-2
-10-2
40
Gate to Charge Qg (nC)
-10-1
-100
-101
-102
Drain to Source Voltage VDS (V)
Normalized Effective Transient Thermal Resistance
Fig11. Transient Thermal Response Curve
101
100
0.5
0.2
0.1
10-1 0.05
0.02
10-2
0.01
PDM
t1
Single Pulse
t2
RthJA=63.9 C/W
10-3
10-4
10-3
10-2
10-1
1
101
102
103
Square Wave Pulse Duration tW(sec)
2009. 6. 15
Revision No : 0
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