SEMICONDUCTOR KMB8D0P30QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack. H T P D L G FEATURES A VDSS=-30V, ID=-8A. Drain to Source On Resistance. RDS(ON)=20m (Max.) @ VGS=-10V 8 RDS(ON)=35m (Max.) @ VGS=-4.5V 5 B1 B2 1 MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current DC@Ta=25 @Ta=25 V A IDP -40 A PD 2.5 W Tj 150 Tstg -55~150 RthJA 50 (Note 1) Storage Temperature Range (Note 1) 20 V -8 Maximum Junction Temperature Thermal Resistance, Junction to Ambient 30 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT ID (Note 1) Pulsed Drain Power Dissipation 4 DIM A B1 B2 D G H L P T FLP-8 /W KMB8D0P 30QA Note1) Surface Mounted on 1″ 1″FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2009. 6. 15 1 8 2 7 3 6 4 5 Revision No : 0 1/4 KMB8D0P30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=-250 A -30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=-24V - - -1 A Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 Gate to Source Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 - -3.0 Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance gfs Forward Transconductance VGS=-10V, ID=-8A (Note2) - 15 20 VGS=-4.5V, ID=-5A (Note2) - 25 35 VDS=-5V, ID=-8A (Note2) - 6 - - 1371 - - 295 - - 176 - - 28.2 - - 15.0 - - 5.0 - nA V m S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge VGS=10V VGS=4.5V VDS=-15V, VGS=0V, f=1MHz (Note2) Qg VDS=-15V, VGS=-10V, ID=-8A (Note2) nC Gate to Source Charge Qgs Gate to Drain Charge Qgd - 6.4 - Turn-On Delay Time td(on) - 11.2 - - 5.8 - - 65.0 - - 25.0 - - -0.75 -1.2 tr Turn-On Rise Time td(off) Turn-Off Delay Time VDS=-15V, VGS=-10V ID=-8A, RG=1.6 (Note2) tf Turn-Off Fall Time pF ns Source to Drain Diode Ratings Source to Drain Forward Voltage Note2) Pulse Test : Pulse Width 300 2009. 6. 15 VSD VGS=0V, IS=-1.7A (Note2) V , Duty Cycle 2% Revision No : 0 2/4 KMB8D0P30QA -40 VGS=-10V -5.0V -4.5V Drain Current ID (A) -4.0V -30 -20 -3.5V -10 -3.0V 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Drain to Source On Resistance RDS(ON) (mΩ) Fig2. RDS(on) - ID Fig1. ID - VDS 50 40 30 VGS=-4.5V 20 VGS=-10V 10 0 0 -10 Drain to Source Voltage VDS (V) Normalized On Resistance RDS(ON) Drain Current ID (A) -30 -20 -10 Tj=25 C Tj=-55 C 0 -1 -2 -3 -4 -5 2.0 1.8 1.6 1.4 VGS=-4.5V, ID=-18A 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig6. IS - VSD Fig5. Vth - Tj 102 1.6 VDS = VGS, ID = -250µA Reverse Drain Current IS (A) Normalized Gate to Source Threshold Voltage VGS=-10V, ID=-19A 1.2 Gate to Source Voltage VGS (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) 2009. 6. 15 -40 Fig4. RDS(ON) - Tj -40 0 -30 Drain Current ID (A) Fig3. ID - VGS Tj=150 C -20 Revision No : 0 101 Tj=150 C Tj=25 C 100 Tj=-55 C 10-1 10-2 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage VSD (V) 3/4 Fig8. C - VDS Fig7. RDS(ON) - VGS 104 50 40 30 Tj=150 C 20 Tj=25 C Ciss 103 Coss Crss 102 10 0 -2 -4 -6 -8 101 -10 0 -5 -10 -15 -20 -25 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. VGS - Qg Fig10. Safe Operation Area -30 -102 -10 ID = -8A -8 Drain Current ID (A) Gate to Source Voltage VGS (V) f=1MHz ID=-8A Capacitance C (pF) Drain to Source On Resistance RDS(ON) (mΩ) KMB8D0P30QA -6 -4 -2 100us -101 M L) I IT 1ms N 10ms O S( -100 RD 100ms -10-1 DC VGS= -10V SINGLE PULSE TA= 25 C 0 0 10 20 30 -10-2 -10-2 40 Gate to Charge Qg (nC) -10-1 -100 -101 -102 Drain to Source Voltage VDS (V) Normalized Effective Transient Thermal Resistance Fig11. Transient Thermal Response Curve 101 100 0.5 0.2 0.1 10-1 0.05 0.02 10-2 0.01 PDM t1 Single Pulse t2 RthJA=63.9 C/W 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration tW(sec) 2009. 6. 15 Revision No : 0 4/4