SEMICONDUCTOR KMA3D7P20SA TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for use as a load switch. E B L L VDSS=-20V, ID=-3.7A D FEATURES 3 G A 2 H Drain to Source on-state Resistance 1 RDS(ON)=76m (Max.) @ VGS=-4.5V RDS(ON)=112m (Max.) @ VGS=-2.5V J K MAXIMUM RATING (Ta=25 SYMBOL P-Ch UNIT Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGSS 12 DC@Ta=25℃ (Note1) ID -3.7 Pulsed (Note1) IDP -16 IS -16 Drain to Source Diode Forward Current Drain Ta=25℃ (Note1) Power Dissipation Ta=100℃ (Note1) PD M SOT-23 V A A 1.25 W 0.6 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient (Note1) RthJA 100 Maximum Junction Temperature Note1) Surface Mounted on 1 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 ) CHARACTERISTIC Drain Current P N C P DIM A B C D E G H J K L M N P KNH /W 1 FR4 Board, t 5sec. PIN CONNECTION (TOP VIEW) D 3 3 2009. 6. 10 2 1 G S 2 Revision No : 1 1 1/4 KMA3D7P20SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=-250 A -20 - - V Drain Cut-off Current IDSS VGS=0V, VDS=-20V - - -1 A Gate to Source Leakage Current IGSS VGS= - - 100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=-250 A -0.55 - -1.5 V Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance 12V, VDS=0V VGS=-4.5V, ID=-2.8A (Note2) - 65 76 VGS=-2.5V, ID=-2.3A (Note2) - 90 112 - 443 - - 92 - - 51 - - 4.37 - - 0.54 - m Dynamic Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS=-10V, f=1MHz VGS=0V VDS=-10V, ID=-2.8A Gate to Source Charge Qgs Gate to Drain Charge Qgd - 1.54 - Turn-on Delay time td(on) - 6.2 - - 18 - - 50 - - 33 - - -0.8 -1.2 tr Turn-on Rise time td(off) Turn-off Delay time VGS=-4.5V (Note2) VDD=-10V, VGS=-4.5V , ID=-2.8A, RG=6 (Note2) tf Turn-off Fall time pF nC ns Source to Drain Diode Ratings VSD Source to Drain Forward Voltage Note2) Pulse Test : Pulse width <300 2009. 6. 10 VGS=0V, IS=-1.0A (Note2) V , Duty cycle < 2% Revision No : 1 2/4 Fig1. ID - VDS Drain Current ID (A) -20 -4.5V -3.5V -16 -3.0V -12 -2.5V -8 VGS = -1.4V -2.0V -4 -1.8V -1.6V 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Drain to Source On Resistance RDS(ON) (mΩ) KMA3D7P20SA Fig2. RDS(ON) - ID 200 160 VGS = -2.5V 120 80 VGS = -4.5V 40 0 0 -5 Drain to Source Voltage VDS (V) Fig4. RDS(ON) - Tj -16 Tj=25 C Tj=150 C Tj= -55 C -8 -4 0 -1 -2 -3 -4 Normalized On-Resistance RDS(ON) (mΩ) Drain Current ID (A) -20 0 1.8 1.5 VGS = -4.5V 1.2 VGS = -2.5V 0.9 0.6 0.3 -75 -50 -25 Gate to Source Voltage VGS (V) 0 -1.2 -1.0 -0.8 -0.6 -0.4 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C) 2009. 6. 10 75 100 125 150 175 -100 VGS = VDS ID = -250µA -0.2 -75 -50 -25 50 Fig6. IS - VSD Reverse Drain Current IS (A) Threshold Voltage Vth (V) -1.4 25 Junction Temperture Tj ( C ) Fig5. Vth - Tj -1.6 -20 Drain Current ID (A) Fig3. ID - VGS -12 -15 -10 Revision No : 1 -10 -1 Tj=150 C Tj=25 C Tj=-55 C -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Source to Drain Forward Voltage VSD (V) 3/4 KMA3D7P20SA Fig8. C - VDS 200 750 ID = -2.8V f = 1MHz 160 600 Capacitance C (pF) Drain Source On Resistance RDS(ON) (mΩ) Fig7. RDS(ON) - VGS 120 Tj=150 C 80 Tj=25 C 40 Ciss 450 300 Coss 150 0 -1 0 -2 -3 -4 Crss 0 -5 5 0 Gate to Source Voltage VGS (V) 15 20 Drain to Source Voltage VDS (V) Fig10. Safe Operation Area Fig9. Qg - VGS -102 -5 VDS = -10V ID = -2.8A -4 Drain Current ID (A) Gate to Source Voltage VGS (V) 10 -3 -2 -1 1 2 3 4 200µs 5 1ms RDS(ON) Limited -100 10ms 100ms -10-1 VGS= -4.5V SINGLE PULSE Ta= 25 C -10-2 -10-2 0 0 -101 DC -10-1 -100 -101 -102 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 0.01 PDM t1 Single Pulse t2 10-3 10-4 1. Duty Cycle D = t1/t2 2. RthJA=110 C/W 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tw (sec) 2009. 6. 10 Revision No : 1 4/4