KEC KTC2874

KTC2874
SEMICONDUCTOR
SILICON NPN TRANSISTOR
EPITAXIAL PLANAR TYPE
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
B
C
High Emitter-Base Voltage : VEBO=25V(Min.)
A
High Reverse hFE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA)
DIM
A
B
C
d
D
E
G
L
P
T
E
G
D
L
d
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
25
V
Collector Current
IC
300
mA
Base Current
IB
60
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Tstg
-55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
P
P
1
2
3
T
MAXIMUM RATING (Ta=25
MILLIMETERS
4.7 MAX
5.1 MAX
4.1 MAX
0.45
0.55 MAX
0.8
1.8
12.7 MIN
1.27
0.45
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=25V, IC=0
-
-
0.1
A
DC Current Gain (Note)
hFE *
VCE=2V, IC=4mA
200
-
1200
VCE(sat)
IC=30mA, IB=3mA
-
0.042
0.1
V
Base-Emitter Voltage
VBE
VCE=2V, IC=4mA
-
0.61
-
V
Transition Frequency
fT
VCE=6V, IC=4mA
-
30
-
MHz
VCB=10V, IE=0, f=1MHz
-
4.8
7
pF
-
160
-
-
500
-
-
130
-
Turn-on Time
Time
INPUT
Storage Time
tstg
Fall Time
tf
*Note) : hFE Classification
2003. 6. 30
OUTPUT
tON
A:200~700,
4kΩ
10V
50Ω
Switching
Cob
1kΩ
Collector Output Capacitance
3kΩ
Collector-Emitter Saturation Voltage
nS
1µs
DUTY CYCLE <
= 2%
VBB =-3V
VCC =12V
B: 350 1200
Revision No : 4
1/3
KTC2874
I C - VCE
40
-10
160
COMMON
EMITTER
Ta=25 C
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
50
I C - V CE (REVERSE REGION)
140
120
100
80
30
60
40
20
I B =20µA
10
0
0
0
2
4
6
8
COMMON
EMITTER
Ta=25 C
-8
50
40
30
-6
20
-4
I B=10µA
-2
0
0
10
-2
0
COLLECTOR-EMITTER VOLTAGE V CE (V)
-4
COLLECTOR-EMITTER SATURATION
VOLTAGE V CE(sat) (mV)
DC CURRENT GAIN h FE
Ta=100 C
1k
500
VCE =6V
Ta=25 C
Ta=-25 C
300
VCE =2V
100
50
0.3
1
3
10
30
100
500
300
COMMON EMITTER
I C /I B =10
100
50
30
10
5
3
1
0.1
COLLECTOR CURRENT I C (mA)
0.3
1
3
TRANSTION FREQUENCY f T (MHz)
VCE =2V
00
C
200
Ta=
1
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
Ta=25 C
Ta=-25 C
0
0.4
0.8
1.2
BASE-EMITTER VOLTAGE VBE (V)
2003. 6. 30
30
100
300
fT - IE
300
0
10
COLLECTOR CURRENT I C (mA)
I C - V BE
100
-10
VCE(sat) - I C
COMMON EMITTER
3k
-8
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
5k
-6
Revision No : 4
1.6
500
300
COMMON EMITTER
VCE =6V
Ta=25 C
100
50
30
10
5
-0.1
-0.3
-1
-3
-10
-30
-100
EMITTER CURRENT I E (mA)
2/3
KTC2874
R ON - I B
30
f=1MHz
I E =0
Ta=25 C
10
5
3
1
0.3
0.5
1
3
5
10
30
COLLECTOR-EMITTER ON RESISTANCE
R ON (Ω)
COLLECTOR OUTPUT CAPACITANCE
C ob (pF)
C ob - V CB
100
1kΩ
50
30
10kΩ
IB
10
5
3
1
0.5
0.3
0.01
0.03
0.1
0.3
1
3
10
BASE CURRENT I B (mA)
COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR POWER DISSIPATION
P C (mW)
Pc - Ta
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 6. 30
Revision No : 4
3/3