SEMICONDUCTOR KTN2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES B C A ・High Frequency Characteristics : fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA). ・Excellent Switching Characteristics. N ・KTN2369/2369A Electrically Similar to 2N2369/2369A. E K G J D MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 4.5 V IC 500 mA PC 625 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. VCB=20V, IE=0 - - 0.4 VCB=20V, IE=0, Ta=125℃ - - 30 Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 40 - - Collector-Emitter Breakdown Voltage * V(BR)CEO IE=10mA, IB=0 15 - - Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 4.5 - - KTN2369/A IC=10mA, VCE=1.0V 40 - 120 KTN2369 IC=10mA, VCE=1.0V, Ta=-55℃ 20 - - IC=10mA, VCE=0.35V, Ta=-55℃ 20 - - KTN2369 IC=100mA, VCE=2.0V 20 - - KTN2369A IC=100mA, VCE=1.0V 20 - - DC Current Gain hFE KTN2369A UNIT μA V Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1.0mA - - 0.25 V Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1.0mA 0.70 - 0.85 V IC=10mA, VCE=10V, f=100MHz 500 - - MHz pF fT Transition Frequency Collector Output Capacitance Cob VCB=5.0V, IE=0, f=1.0MHz - - 4.0 Storage Time tstg IC=100mA, IB1=-IB2=10mA, VCC=10V - - 13 - - 12 - - 15 Turn-on Time ton Turn-off Time toff VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=-1.5mA IC=10mA, IB1=3.0mA IB2=-1.5mA, VCC=3.0V nS * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2002. 6. 17 Revision No : 3 1/2 KTN2369/A VCE =1V 150 Ta=125 C 100 Ta=25 C Ta=-40 C 50 0 0.01 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 1.5 0.1 1 10 100 Ta=125 C 0.5 0.3 1 3 10 30 100 300 Ta=25 C Ta=-40 C 0 0.1 0.3 1 3 10 30 100 5.0 4.0 0.5 0.3 C Ta=-4 0 Ta=2 5 C 1 0.2 0.4 0.6 0.8 BASE-EMITTER VOLTAGE V BE (V) Revision No : 3 1.0 300 COMMON EMITTER f=1MHz Ta=25 C C ibo 3.0 Cobo 2.0 1.0 0 0.1 0.3 1.0 3.0 3 10 0 50 P C - Ta 0.1 2002. 6. 17 0.1 I C - V BE 5 3 0 Ta=125 C COLLECTOR-BASE VOLTAGE V CB (V) EMITTER-BASE VOLTAGE V EB (V) COMMON EMITTER VCE =1V 10 0.2 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (W) 30 0.3 Ta=1 25 C COLLECTOR CURRENT IC (mA) 0.1 0.3 C ob - V CB , C ib - V EB Ta=-40 C Ta=25 C 0.7 0.4 VBE(sat) - I C 1.1 0.9 COMMON EMITTER I C /I B =10 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /I B =10 1.3 0.5 COLLECTOR CURRENT I C (mA) COLLECTOR OUTPUT CAPACITANCE Cob(pF) COLLECTOR INPUT CAPACITANCE C ib(pF) DC CURRENT GAIN h FE 200 VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) h FE - I C 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2