SEMICONDUCTOR KTC3295 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE ・High hFE : hFE=600～3600. E B L L DIM A B C D E G H J K L M N P 3 H G A 2 D ・Noise Figure : 0.5dB(Typ.) at f=100Hz. 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range P J N M K C P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. T Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA 600 - 3600 hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance VCE(sat) IC=100mA, IB=10mA - 0.12 0.25 V fT VCE=10V, IC=10mA 100 250 - MHz - 3.5 - pF - 0.5 - - 0.3 - Cob NF (1) Noise Figure NF (2) Note : hFE Classification 2002. 4. 9 VCE=6V, IC=2mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=100Hz, Rg=10kΩ VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ dB A:600～1800 , B:1200～3600 Revision No : 3 1/3 KTC3295 160 h FE - I C 400 COMMON EMITTER Ta=25 C 200 120 5k 3k DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE 100 80 80 60 50 40 30 20 I B =10µA 40 0 0 0 2 4 6 Ta=100 C Ta=25 C 1k Ta=-25 C 500 300 100 50 30 COMMON EMITTER V CE =6V 10 8 0.1 COLLECTOR EMITTER VOLTAGE V CE (V) 0.3 1 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 0.5 0.3 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 300 COMMON EMITTER I C /I B =10 Ta=25 C 10 5 3 1 0.5 0.3 0.3 1 3 10 30 100 300 0.1 COLLECTOR CURRENT I C (mA) 0.3 1 COMMON EMITTER VCE =6V Ta=-25 C 80 Ta=25 C Ta=100 C 120 40 0 0 0.4 10 30 100 300 fT - IE TRANSITION FREQUENCY f T (MHz) 160 3 COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 100 0.1 0.01 0.1 0.8 1.2 BASE EMITTER VOLTAGE V BE (V) 2002. 4. 9 30 VBE(sat) - I C COMMON EMITTER I C /I B =10 1 10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 3 3 Revision No : 3 1.6 5k 3k VCC =10V Ta=25 C 1k 500 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 EMITTER CURRENT I E (mA) 2/3 KTC3295 , Θ fe - I E -50 -30 -10 -5 -100 100 INPUT CAPACITANCE C ib (pF) -100 C ib , g ib - I E yfe 50 30 Θ fe COMMON BASE VCE =6V 10 f=100MHz Ta=25 C 5 -0.2 -0.5 -1 -3 -5 -50 -30 -10 INPUT CONDUCTANCE g ib (mS) FORWARD TRANSFER ADMITTANCE y (mS) fe PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) yfe 100 C ib 30 COMMON BASE VCB =6V 10 -5 -10 g ib 50 f=100MHz Ta=25 C 5 -0.2 EMITTER CURRENT I E (mA) -0.5 1 0.5 g ob 50 30 C ob 10 5 -0.2 -0.5 -1 -3 -5 -10 1K 500 300 100 50 FORWARD TRANSFER ADMITTANCE y (mS) fb 3 100 COMMON EMITTER VCB =6V f=100MHz Ta=25 C 100 -500 -300 -100 -50 0.3 0.1 0.05 -0.2 yfb 30 Θ fb 10 5 -0.2 -0.5 -1 -3 -5 -10 20 y rb Θ rb -1 -3 -5 EMITTER CURRENT IE (mA) 2002. 4. 9 50 C ie , g ie - V CE COMMON BASE VCB =6V f=100MHz Ta=25 C -0.5 COMMON BASE VCB =6V f=100MHz Ta=25 C , Θ rb - I E 1 0.5 -10 EMITTER CURRENT I E (mA) INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) -1k REVERSE TRANSFER ADMITTANCE y rb (mS) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ rb ( ) EMITTER CURRENT I E (mA) y rb -5 , Θ fb - I E yfb PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fb ( ) 5 OUPUT CONDUCTANCE gob (µS) OUPUT CAPACITANCE C ob (pF) 10 200 -3 EMITTER CURRENT I E (mA) C ob , g ob - I E 20 -1 Revision No : 3 -10 C ie 10 COMMON BASE I E =-1mA 5 f=100MHz Ta=25 C g ie 3 1 1 3 5 10 30 COLLECTOR-BASE VOLTAGE V CE (V) 3/3