SEMICONDUCTOR KTC3197 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. B C A FEATURES ᴌHigh Gain : Gpe=33dB(Typ.) (f=45MHz). ᴌGood Linearity of hFE. N E K G J D MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 4 V Collector Current IC 50 mA Emitter Current IE -50 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 0.1 V(BR)CEO IC=10mA, IB=0 25 - - VCE=12.5V, IC=12.5mA 20 - 200 - - 0.2 - - 1.5 0.8 - 2.0 pF - - 25 pS VCE=12.5V, IC=12.5mA 300 - - MHz VCC=12.5V, IE=-12.5mA f=45MHz 28 - 36 dB Collector-Emitter Breakdown Voltage hFE DC Current Gain Saturation Collector-Emitter VCE(sat) Voltage Base-Emitter VBE(sat) Collector Output Capacitance Cob Collector-Base Time Constant Ccᴌrbb’ fT Transition Frequency Gpe Power Gain (Fig.1) 1994. 6. 24 Revision No : 0 IC=15mA, IB=1.5mA VCB=10V, IE=0, f=1MHz VCB=10V, IE=-1mA, f=30MHz Ọ A V V 1/4 KTC3197 Fig. 1 45MHz Gpe TEST CIRCUIT 7pF 3 10pF INPUT 0.05µF 2 Rg =50Ω 2.2kΩ 1 COIL DATA 0.20mmΦ Cu WIRE L=12µH WITH M-5 CORE T : 1 - 2 3.0T 2 - 3 8.0T OUTPUT R L=50 4 5 4 - 5 1.0T 0.005µF 0.005µF IE V CC STATIC CHARACTERISTICS I C - V CE 16 0.3 16 CE 8 =1 0.2 0.15 2.5 V 0.1 I B =0.05mA 0 4 BASE-EMITTER VOLTAGE VBE (V) C 0.25 V 12 0 0.4 VCE =12.5V COMMON EMITTER Ta=25 C 0.8 1.2 0.3 0.2 0.1 0 5 0.3 14 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I C (mA) 20 10 15 20 0.25 12 0.2 10 0.15 8 6 0.1 4 IB =0.05mA 2 0 0 0 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE CURRENT I B (mA) 2 4 8 10 12 14 h FE - I C 300 DC CURRENT GAIN h FE 40 POWER GAIN G pe (dB) 6 COLLECTOR-EMITTER VOLTAGE V CE (V) G pe - I E (See Fig 1) 30 20 COMMON EMITTER 10 COMMON EMITTER Ta=25 C VCC =12.5V f=45MHz COMMON EMITTER Ta=25 C 100 VCE =12.5V 50 VCE =3V 30 Ta=25 C 0 -2 -4 -6 -8 -10 -12 EMITTER CURRENT I E (mA) 1994. 6. 24 Revision No : 0 -14 -16 10 0.2 0.5 1 3 1 0 30 100 COLLECTOR CURRENT I C (mA) 2/4 KTC3197 COMMON EMITTER VCE =12.5V Ta=25 C 500 300 100 0.2 1 0.5 3 10 5 30 50 f=1MHz Ta=25 C 10 5 3 1 0.2 COLLECTOR CURRENT I C (mA) 0.5 4 80 60 3 g oe VCE =10V 40 Coe 20 15 12.5 1 0 6 8 10 12 14 4 60 3 VCE =10V 40 C oe 20 15 VCE =10V 12.5 15 g ie 7 9 11 13 COLLECTOR CURRENT I C (mA) Revision No : 0 12 15 8 2 12.5 1 0 0 6 8 10 12 INPUT CONDUCTANCE g ie (mS) 20 5 g oe 4 24 12.5 80 12 14 g ie , C ie - I C 16 5 15 g ie , C ie - I C 8 4 6 COLLECTOR CURRENT IC (mA) VCE =10V 12.5 15 C ie 6 100 7 VCE =10V COMMON EMITTER f=58MHz Ta=25 C 120 16 COMMON EMITTER f=45MHz Ta=25 C 10 140 COLLECTOR CURRENT I C (mA) 12 INPUT CONDUCTANCE g ie (mS) 2 0 4 1994. 6. 24 5 12.5 OUTPUT CONDUCTANCE g oe (µS) 15 6 OUTPUT CAPACITANCE C oe (pF) 7 VCE =10V INPUT CAPACITANCE C ie (pF) OUTPUT CONDUCTANCE g oe (µS) 100 50 g oe , Coe - I C COMMON EMITTER f=45MHz Ta=25 C 120 10 COLLECTOR-BASE VOLTAGE VCB (V) g oe , Coe - IC 140 3 1 16 24 COMMON EMITTER f=58MHz Ta=25 C 10 8 15 6 12.5 10 12.5 5 7 9 11 16 12 VCE =15V C ie 20 VCE =10V g ie 4 OUTPUT CAPACITANCE C oe (pF) 1k 20 13 INPUT CAPACITANCE C ie (pF) TRANSITION FERQUENCY f T (MHz) 2k C ob - VCB COLLECTOR OUTPUT CAPACITANCE Cob (pF) f T - IC 8 15 COLLECTOR CURRENT I C (mA) 3/4 g re , b re - IC REVERSE TRANSFER CONDUCTANCE g re (mS) REVERSE TRANSFER SUSCEPTANCE bre (mS) -0.38 VCE =10V -0.34 b re -0.30 12.5 -0.26 COMMON EMITTER -0.22 Ta=25 C 15 f=45MHz -0.18 VCE =10V g re -0.14 12.5 15 -0.10 4 6 8 10 12 14 16 COLLECTOR CURRENT I C (mA) g re , b re - I C -0.52 VCE =10V 12.5 15 -0.48 b re -0.44 -0.40 COMMON EMITTER -0.36 Ta=25 C f=58MHz -0.32 -0.28 -0.24 4 6 12.5 15 g re -120 100 -100 COMMON EMITTER f=45MHz 80 60 4 6 -80 Ta=25 C b re 8 10 12 14 COLLECTOR CURRENT I C (mA) 1994. 6. 24 Revision No : 0 -60 16 FORWARD TRANSFER CONDUCTANCE gfe (mS) 15 120 -140 FORWARD TRANSFER SUSCEPTANCE b fe (mS) VCE =10V fe FORWARD TRANSFER CONDUCTANCE g (mS) -160 VCE =10V 8 10 12 14 16 COLLECTOR CURRENT I C (mA) g fe , b fe - I C 160 12.5 12.5 15 gre gfe , b fe - I C 140 VCE =10V 160 -160 COMMON EMITTER VCE =10V f=58MHz 140 Ta=25 C 12.5 15 120 12.5 15 80 60 6 -100 -80 b fe 4 -120 VCE =10V g fe 100 -140 8 10 12 14 -60 16 FORWARD TRANSFER SUSCEPTANCE b fe (mS) REVERSE TRANSFER CONDUCTANCE g re (mS) REVERSE TRANSFER SUSCEPTANCE bre (mS) KTC3197 COLLECTOR CURRENT I C (mA) 4/4