SEMICONDUCTOR KTD1415 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. K Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. L L R J M ) CHARACTERISTIC D SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 7 A Base Current IB 0.2 A Collector Power Dissipation (Tc=25 ) PC 30 W Junction Temperature Tj 150 Tstg -55 150 D N 1 N 2 H 3 M N P Q R S 0.5 Typ G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S 2. COLLECTOR 3. EMITTER Storage Temperature Range TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE ~ = 5KΩ ~ = 150Ω EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 100 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 3.0 mA V(BR)CEO IC=50mA, IB=0 100 - - V hFE(1) VCE=3V, IC=3A 2000 - 15000 hFE(2) VCE=3V, IC=7A 1000 - - VCE(sat)(1) IC=3A, IB=6mA - 0.9 1.5 VCE(sat)(2) IC=7A, IB=14mA - 1.2 2.0 VBE(sat) IC=3A, IB=6mA - 1.5 2.5 Turn-on Time ton 20µS - 0.8 - Storage Time tstg - 3.0 - - 2.5 - Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Time INPUT I B1 I B1 Fall Time 2007. 5. 22 V Revision No : 1 tf I B2 OUTPUT 15Ω I B2 I B1 =-I B2 =6mA DUTY CYCLE 1% VCC =45V V S 1/3 KTD1415 I C - V CE I C - VCE Tc=25 C 8 1.4 1.2 6 1.0 0.8 4 0.6 0.4 2 I B =0.2mA 0 2 4 6 8 10 COMMON EMITTER Tc=100 C 8 1.0 0.8 6 0.6 0.4 4 I B=0.2mA 2 0 0 0 0 12 0 2 4 12 h FE - I C 20000 COMMON EMITTER DC CURRENT GAIN h FE Tc=-50 C 4.0 3.5 3.0 2.5 6 2.0 4 1.5 1.0 2 4 6 8 00 C =1 Tc 5000 25 3000 -50 1000 500 0 2 COMMON EMITTER VCE =3V 10000 I B =0.5mA 0 10 300 12 1 0.3 V CE(sat) - I C 5 10 30 V BE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COMMON EMITTER I C /I B =500 3 Tc=100 C 25 -50 0.5 3 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 I C - V CE 0 0.3 COMMON EMITTER I C /I B =500 5 3 Tc=100 C 25 1 -50 0.5 0.4 1 3 5 10 COLLECTOR CURRENT I C (A) 2007. 5. 22 8 COLLECTOR-EMITTER VOLTAGE VCE (V) 8 1 6 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 COLLECTOR CURRENT I C (A) 10 COMMON EMITTER COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 10 Revision No : 1 20 0.4 1 3 5 10 20 COLLECTOR CURRENT I C (A) 2/3 KTD1415 r th - t w COLLECTOR CURRENT I C (A) 7 -50 C 4 25 5 Tc=10 0 6 3 2 1 COMMON EMITTER V CE =3V 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 BASE-EMITTER VOLTAGE V BE (V) TRANSIENT THERMAL RESISTANCE r th ( C/W) I C - V BE CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 2 NO HEAT SINK 100 1 10 2 1 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH t w (sec) SAFE OPERATING AREA I C MAX.(PULSED) S TI RA PE O C C 5 D c=2 T 3 O N 1 0.5 0.3 SINGLE NONREPETITIVE PULSE Tc=25 C 0.1 VCEO MAX. COLLECTOR CURRENT I C (A) S 0µ m S S 5 10 0m 1m 10 I C MAX. (CONTINUOUS) 10 10 CURVES MUST BE DERATED 0.05 LINEARLY WITH INCREASE IN TEMPERATURE 0.03 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 5. 22 Revision No : 1 3/3