SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage N K : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. E G Complementary to the KTN2907/2907A. J D KTN2222/2222A Electrically Similar to 2N2222/2222A. H CHARACTERISTIC RATING KTN2222 KTN2222A UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature Storage Temperature Range 2003. 6. 16 IC 600 mA PC 625 mW Tj 150 Tstg -55 150 Revision No : 2 3 1. EMITTER 2. BASE 3. COLLECTOR ) SYMBOL 2 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L MAXIMUM RATING (Ta=25 1 C F F DIM A B C D E F G H J K L M N TO-92 1/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current KTN2222A KTN2222 Collector Cut-off Current KTN2222A Emitter Cut-off Current KTN2222A Breakdown Voltage KTN2222A * KTN2222 Breakdown Voltage KTN2222A Emitter-Base KTN2222 Breakdown Voltage KTN2222A DC Current Gain - - 10 nA VCB=50V, IE=0 - - 0.01 VCB=60V, IE=0 - - 0.01 IEBO VEB=3V, IC=0 - - 10 V(BR)CBO IC=10 A, IE=0 60 - - 75 - - 30 - - 40 - - 5 - - 6 - - ICBO * IE=10mA, IB=0 V(BR)EBO IE=10 A, IC=0 KTN2222 hFE(2) IC=1mA, VCE=10V 50 - - KTN2222A hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 hFE(5) IC=500mA, VCE=10V 30 - - 40 - - VCE(sat)1 IC=150mA, IB=15mA - - 0.4 - - 0.3 - - 1.6 - - 1 - - 1.3 0.6 - 1.2 - - 2.6 - - 2.0 250 - - 300 - - - - 8 - - 30 - - 25 KTN2222A KTN2222 KTN2222 * V(BR)CEO - KTN2222A KTN2222A KTN2222 KTN2222A KTN2222 KTN2222A Collector Output Capacitance Input Capacitance VCE=60V, VEB(OFF)=3V - * Saturation Voltage Transition Frequency UNIT 35 KTN2222 Saturation Voltage MAX. IC=0.1mA, VCE=10V KTN2222A Base-Emitter TYP. hFE(1) KTN2222 Collector-Emitter MIN. ICEX TEST CONDITION KTN2222 Collector-Base Collector-Emitter SYMBOL KTN2222 KTN2222A VCE(sat)2 IC=500mA, IB=50mA VBE(sat)1 IC=150mA, IB=15mA VBE(sat)2 fT IC=500mA, IB=50mA IC=20mA, VCE=20V, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz A nA V V V V V MHz pF pF * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2003. 6. 16 Revision No : 2 2/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. IC=1mA, VCE=10V, f=1kHz 2 - 8 IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 - - 150 pS - - 4 dB Input Impedance KTN2222A hie Voltage Feedback Ratio KTN2222A hre Small-Singal Current Gain KTN2222A hfe Collector Output Admittance KTN2222A hoe Collector-Base Time Constant KTN2222A Cc rbb' Noise Figure KTN2222A NF Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Switching Time 2003. 6. 16 Revision No : 2 IE=20mA, VCB=20V, f=31.8MHz IC=100 A, VCE=10V, Rg=1k , f=1kHz UNIT k x10-4 nS 3/5 KTN2222/A 1000 h FE - I C 1K COMMON EMITTER Ta=25 C 800 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE 16mA 14mA 12mA 10mA 8mA 6mA 4mA 20mA 18mA 600 400 I B =2mA 200 0 0.4 0.8 1.2 1.6 VCE =10V 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V 100 50 30 10 0.5 1.8 1 3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 0.2 VCE(sat) 3 10 30 100 300 1.2 Ta=-25 C 0.8 Ta=25 C 0.6 Ta=75 C 0.4 0.2 3 1 10 30 100 300 COLLECTOR CURRENT I C (mA) I C - V BE fT - IC COMMON EMITTER VCE =10V 30 Ta=75 C 10 C 3 1 1K VBE(sat) 1.0 COLLECTOR CURRENT I C (mA) 100 Ta=-25 C 0.3 0.1 0.05 300 COMMON EMITTER I C /I B =10 1.4 0 0.5 1k TRANSITION FREQUENCY f T (MHz) 500 300 COLLECTOR CURRENT I C (mA) 1.6 0.4 1 100 VBE(sat) - I C COMMON EMITTER I C /I B =10 Ta=25 C Ta= 25 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 0 0.5 30 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 0.6 10 1000 1k Ta=25 C VCE =10V 300 100 30 10 -1 -3 -10 -30 -100 -300 -1k -3k COLLECTOR CURRENT I C (mA) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 BASE-EMITTER VOLTAGE VBE (V) 2003. 6. 16 Revision No : 2 4/5 2003. 6. 16 Cob - V CB Cib - V EB 100 Pc - Ta COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) KTN2222/A COMMON EMITTER f=1MHz, Ta=25 C 30 Cib 10 Cob 3.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) Revision No : 2 -300 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 5/5