SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to KTN2907AE. ) CHARACTERISTIC C MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + D E G 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + H J 0.50 _ 0.05 0.13 + J C MAXIMUM RATING (Ta=25 DIM A B 1. EMITTER SYMBOL RATING UNIT Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation (Ta=25 ) PC 100 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 2. BASE 3. COLLECTOR ESM Marking ZG 2004. 1. 29 Revision No : 0 1/4 KTN2222AE ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=60V, VEB(OFF)=3V - - 10 nA Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.01 A Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 10 nA V(BR)CBO IC=10 A, IE=0 75 - - V V(BR)CEO IC=10mA, IB=0 40 - - V V(BR)EBO IE=10 A, IC=0 6 - - V hFE(1) IC=0.1mA, VCE=10V 35 - - hFE(2) IC=1mA, VCE=10V 50 - - hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 hFE(5) IC=500mA, VCE=10V 40 - - VCE(sat)1 IC=150mA, IB=15mA - - 0.3 VCE(sat)2 IC=500mA, IB=50mA - - 1 VBE(sat)1 IC=150mA, IB=15mA 0.6 - 1.2 VBE(sat)2 IC=500mA, IB=50mA - - 2.0 300 - - MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * fT Transition Frequency VCE=20V, IC=20mA, f=100MHz V V Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz - - 25 pF hie IC=1mA, VCE=10V, f=1kHz 2 - 8 Input Impedance IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 IE=20mA, VCB=20V, f=31.8MHz - - 150 pS IC=100 A, VCE=10V, - - 4 dB hre Voltage Feedback Ratio hfe Small-Singal Current Gain hoe Collector Output Admittance Collector-Base Time Constant Cc rbb' Noise Figure NF k x10-4 Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Switching Time nS * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2004. 1. 29 Revision No : 0 2/4 KTN2222AE 1000 DC CURRENT GAIN h FE 800 16mA 14mA 12mA 10mA 8mA 6mA 4mA 20mA 18mA 600 400 I B =2mA 200 0.4 0.8 1.2 1.6 VCE =10V 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =1V VCE =2V 100 50 30 10 0.5 1.8 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C VBE(sat) - I C 1K 1.6 0.6 COMMON EMITTER I C /I B =10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1K COMMON EMITTER Ta=25 C 0 Ta=25 C 0.4 0.2 VCE(sat) 0 0.5 500 300 1 3 10 30 100 300 1.2 VBE(sat) 1.0 Ta=-25 C 0.8 Ta=25 C 0.6 Ta=75 C 0.4 0.2 0 0.5 1k 3 1 10 30 100 I C - V BE fT - IC 30 Ta=75 C 10 3 1 Ta=-25 C 0.3 1000 300 100 30 10 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1k Ta=25 C VCE =10V -1 0.1 0.05 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =10V 100 COMMON EMITTER I C /I B =10 1.4 COLLECTOR CURRENT I C (mA) Ta= 25 C COLLECTOR CURRENT I C (mA) h FE - I C TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) I C - V CE -1k -3k (mA) 1.0 BASE-EMITTER VOLTAGE VBE (V) 2004. 1. 29 Revision No : 0 3/4 2004. 1. 29 Cob - V CB Cib - VEB 100 Pc - Ta COMMON EMITTER f=1MHz, Ta=25 C 30 Cib 10 Cob 3.0 1.0 -0.1 -1.0 -10 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) Revision No : 0 -300 COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR OUTPUT CAPACITANCE Cob (pF) COLLECTOR INPUT CAPACITANCE Cib (pF) KTN2222AE 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 4/4