Transistors SMD Type Wide-Band Amplifier Applications 2SA1575 Features High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process. Absolute Maximum Ratings TA=25 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -200 V Collector-emitter voltage (Base open) VCEO -200 V Emitter-base voltage (Collector open) VEBO -4 V Collector current IC -100 mA Collector current (pulse) ICP -200 mA 500 mW Collector power dissipation PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors Diodes SMD Type Wide-Band Amplifier Applications 2SA1575 Electrical Characteristics TA=25 3 Parameter Symbol Test conditions Typ Max Unit Collector-base Breakdown voltage BVCBO IC = -10 ìA , IE = 0 -200 V Collector-emitter Breakdown voltage BVCEO IC = -1mA ,RBE = -200 V Emitter-base Breakdown voltage BVEBO IE = -100 ìA , IC = 0 -4 V Collector-base cutoff current ICBO VCB = -150 V , IE = 0 -0.1 ìA Emitter-base cutoff current IEBO VEB = -2 V , IC = 0 -1.0 ìA Forward current transfer ratio hFE VCE = -10 V , IC = -10 mA 40 VCE = -10 V , IC = -60 mA 20 320 Collector-emitter saturation voltage VCE(sat) IC = -20 mA , IB = -2 mA -1.0 V Base -emitter saturation voltage VBE(sat) IE = -20 mA , IB = -2 mA -1.0 V fT VCE = -30 V , IC= -30 mA 400 MHz Transition frequency Collector output capacitance (Common base, input open circuited) Cob VCB = -30 V , IE = 0 , f = 1MHz 2.3 pF Reverse Transfer Capacitance Cre VCB= -30 V, 1.7 pF hFE Classification Marking hFE 2 Min C 40 to D 80 www.kexin.com.cn 60 to E 120 100 to F 200 160 to 320 f = 1MHz