TYSEMI 2SA1575

Product specification
2SA1575
Features
High fT..
High breakdown voltage.
Small reverse transfer capacitance and excellent.
High-frequency characteristic.
Adoption of FBET process.
Absolute Maximum Ratings TA=25
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
-200
V
Collector-emitter voltage (Base open)
VCEO
-200
V
Emitter-base voltage (Collector open)
VEBO
-4
V
Collector current
IC
-100
mA
Collector current (pulse)
ICP
-200
mA
500
mW
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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Product specification
2SA1575
Electrical Characteristics TA=25
3
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base Breakdown voltage
BVCBO
IC = -10 ìA , IE = 0
-200
V
Collector-emitter Breakdown voltage
BVCEO
IC = -1mA ,RBE =
-200
V
Emitter-base Breakdown voltage
BVEBO
IE = -100 ìA , IC = 0
-4
V
Collector-base cutoff current
ICBO
VCB = -150 V , IE = 0
-0.1
ìA
Emitter-base cutoff current
IEBO
VEB = -2 V , IC = 0
-1.0
ìA
Forward current transfer ratio
hFE
VCE = -10 V , IC = -10 mA
40
VCE = -10 V , IC = -60 mA
20
320
Collector-emitter saturation voltage
VCE(sat)
IC = -20 mA , IB = -2 mA
-1.0
V
Base -emitter saturation voltage
VBE(sat)
IE = -20 mA , IB = -2 mA
-1.0
V
fT
VCE = -30 V , IC= -30 mA
400
MHz
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = -30 V , IE = 0 , f = 1MHz
2.3
pF
Reverse Transfer Capacitance
Cre
VCB= -30 V,
1.7
pF
f = 1MHz
hFE Classification
Marking
hFE
C
40
to
D
80
60
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to
E
120 100
to
F
200 160
to
[email protected]
320
4008-318-123
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