Transistors SMD Type Medium Power Transistor 2SB1188 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A ICP * -3 A PC 0.5 W Collector current Collector power dissipation Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW=100ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltae BVCBO IC = -50 A -40 V Collector-emitter breakdown voltage BVCEO IC = -1mA -32 V Emitter-base breakdown voltage BVEBO IE = -50 A -5 V Collector cutoff current ICBO VCB = -20V -1 ìA Emitter cutoff current IEBO VEB = -4V -1 ìA -0.8 V VCE(sat) IC = -2A , IB = -0.2A Collector-Emitter Saturation Voltage DC current transfer ratio hFE Transition frequency fT Output Capacitance Cob VCE = -3V , IC = -0.5A -0.5 82 390 VCE = -5V , IE = 0.5A , f = 30MHz 100 MHz VCB = -10V , IE = 0, f = 1MHz 50 pF hFE Classification BC Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1