KEXIN 2SA1532

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SA1532
Features
High transition frequency fT.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Base-emitter saturation voltage
VBE
VCE = -10 ìA, IC = -1 mA
Collector-base cutoff current
ICBO
VCB = -10 V, IE = 0
-0.1
ìA
Collector-emitter cutoff current
ICEO
VCE = -20 V, IB = 0
-100
ìA
Emitter-base cutoff current
IEBO
VEB = -5 V, IC = 0
-10
ìA
Forward current transfer ratio
hFE
VCB = -10 V, IE = 1 mA
Collector-emitter saturation voltage
-0.7
50
VCE(sat) IC = -10 mA, IB = -1 mA
V
220
-0.1
V
Transition frequency
fT
VCB = -10 V, IE = 1 mA, f = 200 MHz
Noise voltage
NF
VCB = -10 V, IE = 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = -10 V, IE = 1 mA, f = 2 MHz
22
60
Ù
Common-emitter reverse transfer capacitance
Cre
VCB = -10 V, IE = 1 mA, f = 10.7 MHz
1.2
2.0
pF
150
300
MHz
hFE Classification
E
Marking
Rank
A
B
C
hFE
50 100
70 140
110 220
www.kexin.com.cn
1