Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Base-emitter saturation voltage VBE VCE = -10 ìA, IC = -1 mA Collector-base cutoff current ICBO VCB = -10 V, IE = 0 -0.1 ìA Collector-emitter cutoff current ICEO VCE = -20 V, IB = 0 -100 ìA Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 -10 ìA Forward current transfer ratio hFE VCB = -10 V, IE = 1 mA Collector-emitter saturation voltage -0.7 50 VCE(sat) IC = -10 mA, IB = -1 mA V 220 -0.1 V Transition frequency fT VCB = -10 V, IE = 1 mA, f = 200 MHz Noise voltage NF VCB = -10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = -10 V, IE = 1 mA, f = 2 MHz 22 60 Ù Common-emitter reverse transfer capacitance Cre VCB = -10 V, IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF 150 300 MHz hFE Classification E Marking Rank A B C hFE 50 100 70 140 110 220 www.kexin.com.cn 1