Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1979 Features Low on resistance ron. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Peak collector current ICP 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage VCEO Testconditons IC = 1 mA, IB = 0 Min Typ Max 20 Unit V Base-emitter voltage VBE VCE = 2 V, IC = 4 mA 0.6 Collector-base cutoff current ICBO VCB = 50 V, IE = 0 1 ìA Collector-emitter cutoff current ICEO VEB = 25 V, IC = 0 1 ìA Forward current transfer ratio hFE VCE = 2 V, IC = 4 mA 500 2500 VCE(sat) IC = 30 mA, IB = 3 mA Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Cob ON resistance Ron V 0.1 V VCB = 6 V, IE = -4 mA, f = 200 MHz 80 MHz VCB = 10 V, IE = 0, f = 1 MHz 4.5 pF 1 Ù hFE Classification 3W Marking Rank S T hFE 500 1500 800 2500 www.kexin.com.cn 1