Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit ICBO VCB = 20V, IE = 0 0.1 ìA ICEO VCE = 10V, IB = 0 100 ìA Collector-base voltage VCBO IC = 10ìA, IE = 0 60 V Collector-emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter-base voltage VEBO IE = 10ìA, IC = 0 7 V Collector cutoff current Forward current transfer ratio VCE = 10V, IC = 2mA hFE VCE(sat) IC = 100mA, IB = 10mA Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Cob 160 460 0.1 0.3 V VCB = 10V, IE =-2mA, f = 200MHz 150 MHz VCB = 10V, IE = 0, f = 1MHz 3.5 pF hFE Classification Marking ZQ ZR ZS Rank Q R S hFE 160 260 210 340 290 460 www.kexin.com.cn 1