Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1820 Features Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A mW Collector power dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-base voltage VCBO IC = 10 ìA, IE = 0 30 Typ Max Unit V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 25 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Collector cutoff current ICBO VCB = 20 V, IE = 0 hFE VCE = 10 V, IC = 150 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA Transition frequency VCB = 10 V, IE = -50 mA, f = 200 MHz fT Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.1 85 ìA 340 0.35 0.6 200 6 V MHz 15 pF hFE Classification Marking WQ WR WS Rank Q R S hFE 85 170 120 240 170 340 www.kexin.com.cn 1