Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High collector power dissipation PC 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -180 V Emitter-base voltage VEBO -6 V Peak collector current ICP -3 A -2 A Collector current IC Collector power dissipation TC=25 30 PC W 1.3 Ta=25 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -200V, IE = 0 -50 ìA Emitter cutoff current IEBO VEB = -4V, IC = 0 -50 ìA Collector to base voltage VCBO IC = -500ìA, IE = 0 -200 Collector to emitter voltage VCEO IC = -5mA, IB = 0 -180 V Emitter to base voltage VEBO IE = -500ìA, IC = 0 -6 V VCE = -10V, IC = -150mA 60 VCE = -10V, IC = -400mA 50 V 240 Forward current transfer ratio hFE Base to emitter voltage VBE VCE = -10V, IC = -400mA -1 V VCE(sat) IC = -500mA, IB = -50mA -1 V Collector to emitter saturation voltage Transition frequency fT VCE = -10V, IC = -0.5A, f = 10MHz 30 MHz hFE Classification Rank Q P hFE 60 to 140 100 to 240 www.kexin.com.cn 1