KEXIN 2SB928A

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB928A
TO-252
Features
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
High collector to emitter VCEO
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High collector power dissipation PC
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-200
V
Collector-emitter voltage
VCEO
-180
V
Emitter-base voltage
VEBO
-6
V
Peak collector current
ICP
-3
A
-2
A
Collector current
IC
Collector power dissipation
TC=25
30
PC
W
1.3
Ta=25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -200V, IE = 0
-50
ìA
Emitter cutoff current
IEBO
VEB = -4V, IC = 0
-50
ìA
Collector to base voltage
VCBO
IC = -500ìA, IE = 0
-200
Collector to emitter voltage
VCEO
IC = -5mA, IB = 0
-180
V
Emitter to base voltage
VEBO
IE = -500ìA, IC = 0
-6
V
VCE = -10V, IC = -150mA
60
VCE = -10V, IC = -400mA
50
V
240
Forward current transfer ratio
hFE
Base to emitter voltage
VBE
VCE = -10V, IC = -400mA
-1
V
VCE(sat)
IC = -500mA, IB = -50mA
-1
V
Collector to emitter saturation voltage
Transition frequency
fT
VCE = -10V, IC = -0.5A, f = 10MHz
30
MHz
hFE Classification
Rank
Q
P
hFE
60 to 140
100 to 240
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