Transistors IC SMD Type N-channel Enhancement Mode MOSFET 2SK3652 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 High avalanche resistance 5 .6 0 Low on-resistance, low Qg +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS 30 V Drain current ID 50 A Peak drain current IDP 200 A Avalanche energy capability * EAS 2 200 mJ Power dissipation Ta = 25 PD Power dissipation 3 W 100 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3652 Electrical Characteristics Ta = 25 Parameter Gate-drain surrender voltage VDSS Testconditons ID = 1 mA, VGS = 0 Gate threshold voltage Vth VDS = 25 V, ID = 10 mA Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 Gate-source cutoff currentt IGSS VGS = Drain-source on resistance Forward transfer admittance Min 2 29 17 Unit V 30 V, VDS = 0 VDS = 25 V, ID = 25 A Max 230 RDS(on) VGS = 10 V, ID = 25 A Yfs Typ 4 V 100 ìA 1 ìA 40 mÙ 35 S 5 950 pF 850 pF 80 pF Short-circuit forward transfer capacitance Ciss Short-circuit output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) 65 ns tr 140 ns 470 ns Rise time Turn-off delay time Fall time Diode foward voltage td(off) VDS = 25 V, VGS = 0, f = 1 MHz VDD = 100 V, ID = 25 A,RL = 4 Ù, VGS = 10 V tf VDSF 145 IDR = 50 A, VGS = 0 Reverse recovery time trr L = 230 ìH, VDD = 100 V Reverse recovery charge Qrr IDR = 25 A, di/dt = 100 A/ìs Total gate charge Qg Gate-source charge Qgs Gate-drain charge 2 Symbol Qgd VDD = 100 V, ID = 25 A,VGS = 10 V ns -1.5 235 V ns 1 180 nC 105 nC 40 nC 14 nC Channel-case heat resistance Rth(ch-c) 1.25 /W Channel-atmosphere heat resistance Rth(ch-a) 41.6 /W www.kexin.com.cn